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Unintentional Bulk Doping of Polymer‐Fullerene Blends from a Thin Interfacial Layer of MoO3

Unintentional Bulk Doping of Polymer‐Fullerene Blends from a Thin Interfacial Layer of MoO3 Charge selective interlayers are of critical importance in order for solar cells based on low mobility materials, such as polymer‐fullerene blends, to perform well. Commonly used anode interlayers consist of high work function transition metal oxides, with molybdenum trioxide (MoO3) being arguably the most used. Here, it is shown that a thin interlayer of MoO3 causes unintentional bulk doping in solar cells based on polymers and polymer‐fullerene blends. The doping concentrations determined from capacitance–voltage measurements are larger than 1016 cm−3 and are seen to increase closer to the anode, reference devices without MoO3 are undoped. Using time of flight secondary ion mass spectroscopy it is furthermore shown that molybdenum is present on the surface of all films with an interfacial layer of MoO3 beneath the active layer. Doping concentrations of this magnitude are detrimental for device performance, especially for active layers >100 nm. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Advanced Energy Materials Wiley

Unintentional Bulk Doping of Polymer‐Fullerene Blends from a Thin Interfacial Layer of MoO3

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References (33)

Publisher
Wiley
Copyright
Copyright © 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
ISSN
1614-6832
eISSN
1614-6840
DOI
10.1002/aenm.201600670
Publisher site
See Article on Publisher Site

Abstract

Charge selective interlayers are of critical importance in order for solar cells based on low mobility materials, such as polymer‐fullerene blends, to perform well. Commonly used anode interlayers consist of high work function transition metal oxides, with molybdenum trioxide (MoO3) being arguably the most used. Here, it is shown that a thin interlayer of MoO3 causes unintentional bulk doping in solar cells based on polymers and polymer‐fullerene blends. The doping concentrations determined from capacitance–voltage measurements are larger than 1016 cm−3 and are seen to increase closer to the anode, reference devices without MoO3 are undoped. Using time of flight secondary ion mass spectroscopy it is furthermore shown that molybdenum is present on the surface of all films with an interfacial layer of MoO3 beneath the active layer. Doping concentrations of this magnitude are detrimental for device performance, especially for active layers >100 nm.

Journal

Advanced Energy MaterialsWiley

Published: Aug 1, 2016

Keywords: ; ; ;

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