Access the full text.
Sign up today, get DeepDyve free for 14 days.
J. Geisz, D. Friedman, S. Kurtz, J. Olson, A. Swartzlander, R. Reedy, A. Norman (2001)
Epitaxial growth of BGaAs and BGaInAs by MOCVDJournal of Crystal Growth, 225
E. Young, M. Whitwick, T. Tiedje, D. Beaton (2007)
Bismuth incorporation in GaAs1–xBix grown by molecular beam epitaxy with in‐situ light scatteringPhysica Status Solidi (c), 4
G. Kresse, J. Furthmüller (1996)
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set.Physical review. B, Condensed matter, 54 16
G. Feng, K. Oe, M. Yoshimoto (2006)
Bismuth containing III–V quaternary alloy InGaAsBi grown by MBEphysica status solidi (a), 203
D. Ceperley (2010)
THE GROUND STATE OF THE ELECTRON GAS BY A STOCHASTIC METHODLawrence Berkeley National Laboratory
M. Antonell, C. Abernathy, A. Sher, M. Berding, M. Schilfgaarde, A. Sanjuro, K. Wong (1998)
Growth of Tl-containing III–V materials by gas-source molecular beam epitaxyJournal of Crystal Growth, 188
Yong Zhang, A. Mascarenhas, L. Wang (2005)
Similar and dissimilar aspects of III-V semiconductors containing Bi versus NPhysical Review B, 71
K. Huang, C. Chiu, R. Cohen, G. Stringfellow (1994)
InAsSbBi alloys grown by organometallic vapor‐phase epitaxyJournal of Applied Physics, 75
B. Kunert, S. Zinnkann, K. Volz, W. Stolz (2008)
Monolithic integration of Ga(NAsP)/(BGa)P multi-quantum well structures on (0 0 1) silicon substrate by MOVPEJournal of Crystal Growth, 310
F. Vila, J. Rehr, H. Rossner, H. Krappe (2007)
Theoretical X-Ray Absorption Debye-Waller FactorsPhysical Review B, 76
A. Zaoui (2003)
Plane wave pseudopotential study of ground state properties and electrochemical description of thallium nitrideMaterials Science and Engineering B-advanced Functional Solid-state Materials, 103
V. Grillo, E. Carlino, F. Glas (2008)
Influence of the static atomic displacement on atomic resolution Z-contrast imagingPhysical Review B, 77
Masahiro Fushida, H. Asahi, Kazuhiko Yamamoto, Hideki Koh, K. Asami, Shunji Oe (1997)
TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam EpitaxyJapanese Journal of Applied Physics, 36
R. Wentorf (1957)
Cubic Form of Boron NitrideJournal of Chemical Physics, 26
M. Gajdoš, K. Hummer, G. Kresse, J. Furthmüller, F. Bechstedt (2006)
Linear optical properties in the projector-augmented wave methodologyPhysical Review B, 73
Jian Wei, M. Gokhale, S. Forrest (1999)
Growth of thallium containing III–V materials by gas-source molecular beam epitaxyJournal of Crystal Growth, 203
M. Ferhat, B. Bouhafs, A. Zaoui, H. Aourag (1998)
First-principles study of structural and electronic properties of BSbJournal of Physics: Condensed Matter, 10
H. Asahi, Kazuhiko Yamamoto, K. Iwata, Shunji Oe (1996)
New III–V Compound Semiconductors TlInGaP for 0.9 µm to over 10 µm Wavelength Range Laser Diodes and Their First Successful GrowthJapanese Journal of Applied Physics, 35
J. Perri, S. Placa, B. Post (1958)
New group III-group V compounds: BP and BAsActa Crystallographica, 11
B. Fluegel, S. Francoeur, A. Mascarenhas, S. Tixier, E. Young, T. Tiedje (2006)
Giant spin-orbit bowing in GaAs1-xBix.Physical review letters, 97 6
S. Tixier, M. Adamcyk, T. Tiedje, S. Francoeur, A. Mascarenhas, P. Wei, F. Schiettekatte (2003)
Molecular beam epitaxy growth of GaAs1−xBixApplied Physics Letters, 82
H. Monkhorst, J. Pack (1976)
SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONSPhysical Review B, 13
M. Schowalter, Andreas Rosenauer, J. Titantah, D. Lamoen (2009)
Temperature-dependent Debye-Waller factors for semiconductors with the wurtzite-type structure.Acta crystallographica. Section A, Foundations of crystallography, 65 Pt 3
P. Wei, S. Tixier, M. Chicoine, S. Francoeur, A. Mascarenhas, T. Tiedje, F. Schiettekatte (2004)
Ion beam characterization of GaAs1−x−yNxBiy epitaxial layersNuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 219
S. Liebich, M. Zimprich, A. Beyer, C. Lange, D. Franzbach, S. Chatterjee, N. Hossain, S. Sweeney, K. Volz, B. Kunert, W. Stolz (2011)
Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrateApplied Physics Letters, 99
M. Ferhat, A. Zaoui (2006)
Do all III-V compounds have the zinc-blende or wurtzite ground state structure?Applied Physics Letters, 88
J. Perdew, K. Burke, M. Ernzerhof (1996)
Generalized Gradient Approximation Made Simple.Physical review letters, 77 18
M. Born, K. Huang (1954)
Dynamical Theory of Crystal Lattices
K. Parlinski, Zhaofei Li, Y. Kawazoe (1997)
First-Principles Determination of the Soft Mode in Cubic ZrO 2Physical Review Letters, 78
N. Hossain, T. Hosea, S. Sweeney, S. Liebich, M. Zimprich, K. Volz, B. Kunert, W. Stolz (2011)
Band structure properties of novel BxGa1-xP alloys for silicon integrationJournal of Applied Physics, 110
M. Ferhat, A. Zaoui (2006)
Structural and electronic properties of III-V bismuth compoundsPhysical Review B, 73
K. Oe (2002)
Characteristics of Semiconductor Alloy GaAs1-xBixJapanese Journal of Applied Physics, 41
A. Rosenauer, K. Gries, K. Müller, A. Pretorius, M. Schowalter, A. Avramescu, K. Engl, S. Lutgen (2009)
Measurement of specimen thickness and composition in Al(x)Ga(1-x)N/GaN using high-angle annular dark field images.Ultramicroscopy, 109 9
M. Schowalter, Andreas Rosenauer, John Titantah, D. Lamoen (2009)
Computation and parametrization of the temperature dependence of Debye-Waller factors for group IV, III-V and II-VI semiconductors.Acta crystallographica. Section A, Foundations of crystallography, 65 Pt 1
B. Kunert, S. Liebich, A. Beyer, R. Fritz, S. Zinnkann, K. Volz, W. Stolz (2011)
Correlation between hetero-interface properties and photoluminescence efficiency of Ga(NAsP)/(BGa)P multi-quantum well structures on (0 0 1) Si substrateJournal of Crystal Growth, 315
Mean‐square displacements were computed within the harmonic approximation from ab initio force constants for binary B‐, Tl‐ and Bi‐containing III–V compounds in sphalerite crystal structures in the temperature range from 0 to 1000 K in steps of 1 K. An Einstein model with a temperature‐dependent characteristic frequency was used to model the temperature dependence of the mean‐square displacements. A Gaussian was fitted to the temperature dependence of the characteristic frequency and parameters of the Gaussian are given. Phonon dispersion relations and densities of states derived during the computation of the mean‐square displacements are also shown.
Acta Crystallographica Section A Foundations of Crystallography – Wiley
Published: Jan 1, 2012
Keywords: ; ; ; ; ;
Read and print from thousands of top scholarly journals.
Already have an account? Log in
Bookmark this article. You can see your Bookmarks on your DeepDyve Library.
To save an article, log in first, or sign up for a DeepDyve account if you don’t already have one.
Copy and paste the desired citation format or use the link below to download a file formatted for EndNote
Access the full text.
Sign up today, get DeepDyve free for 14 days.
All DeepDyve websites use cookies to improve your online experience. They were placed on your computer when you launched this website. You can change your cookie settings through your browser.