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References (19)
-
Prasert Sinsermsuksakul, Katy Hartman, Sang Kim, Jaeyeong Heo, Leizhi Sun, H. Park, R. Chakraborty, T. Buonassisi, R. Gordon (2013)
Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layerApplied Physics Letters, 102
-
J. Vidal, S. Lany, Mayeul d'Avezac, A. Zunger, A. Zakutayev, J. Francis, J. Tate (2012)
Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnSApplied Physics Letters, 100
-
Leizhi Sun, R. Haight, Prasert Sinsermsuksakul, Sang Kim, H. Park, R. Gordon (2013)
Band alignment of SnS/Zn(O,S) heterojunctions in SnS thin film solar cellsApplied Physics Letters, 103
-
A. Schneikart, H. Schimper, A. Klein, W. Jaegermann (2013)
Efficiency limitations of thermally evaporated thin-film SnS solar cellsJournal of Physics D: Applied Physics, 46
-
J. Vequizo, M. Ichimura (2012)
Fabrication of Electrodeposited SnS/SnO2 Heterojunction Solar CellsJapanese Journal of Applied Physics, 51
-
B. Ghosh, Rupanjali Bhattacharjee, P. Banerjee, Subrata Das (2011)
Structural and optoelectronic properties of vacuum evaporated SnS thin films annealed in argon ambientApplied Surface Science, 257
-
Jaeyeong Heo, Adam Hock, R. Gordon (2010)
Low Temperature Atomic Layer Deposition of Tin OxideChemistry of Materials, 22
-
M. Sugiyama, K. Reddy, N. Revathi, Y. Shimamoto, Y. Murata (2011)
Band offset of SnS solar cell structure measured by X-ray photoelectron spectroscopyThin Solid Films, 519
-
C. Thompson (1990)
Grain Growth in Thin FilmsAnnual Review of Materials Science, 20
-
H. Park, R. Heasley, Leizhi Sun, Vera Steinmann, R. Jaramillo, Katy Hartman, R. Chakraborty, Prasert Sinsermsuksakul, D. Chua, T. Buonassisi, R. Gordon (2015)
Co‐optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cellsProgress in Photovoltaics: Research and Applications, 23
-
M. Devika, N. Reddy, K. Ramesh, K. Gunasekhar, E. Gopal, K. Reddy (2006)
Influence of annealing on physical properties of evaporated SnS filmsSemiconductor Science and Technology, 21
-
T. Minemoto, T. Matsui, H. Takakura, Y. Hamakawa, T. Negami, Y. Hashimoto, T. Uenoyama, M. Kitagawa (2001)
Theoretical analysis of the effect of conduction band offset of window/CIS layers on performance of CIS solar cells using device simulationSolar Energy Materials and Solar Cells, 67
-
M. Devika, N. Reddy, S. Reddy, K. Ramesh, K. Gunasekhar (2009)
Influence of rapid thermal annealing (RTA) on the structural and electrical properties of SnS filmsJournal of Materials Science: Materials in Electronics, 20
-
H. Park, R. Heasley, R. Gordon (2013)
Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealingApplied Physics Letters, 102
-
Prasert Sinsermsuksakul, Jaeyeong Heo, Wontae Noh, Adam Hock, R. Gordon (2011)
Atomic Layer Deposition of Tin Monosulfide Thin FilmsAdvanced Energy Materials, 1
-
J. Scofield, A. Duda, D. Albin, B. Ballard, P. Predecki (1995)
Sputtered molybdenum bilayer back contact for copper indium diselenide-based polycrystalline thin-film solar cellsThin Solid Films, 260
-
G. Tritsaris, B. Malone, E. Kaxiras (2014)
Structural stability and electronic properties of low-index surfaces of SnSJournal of Applied Physics, 115
-
T. Ikuno, R. Suzuki, Kosuke Kitazumi, N. Takahashi, N. Kato, K. Higuchi (2013)
SnS thin film solar cells with Zn1−xMgxO buffer layersApplied Physics Letters, 102
-
A. Niemegeers, M. Burgelman, A. Vos (1995)
ON THE CDS/CUINSE2 CONDUCTION-BAND DISCONTINUITY.Applied Physics Letters, 67
- Publisher
- Wiley
- Copyright
- Copyright © 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
- ISSN
- 1614-6832
- eISSN
- 1614-6840
- DOI
- 10.1002/aenm.201400496
- Publisher site
- See Article on Publisher Site
Abstract
Thin‐film solar cells are made by vapor deposition of Earth‐abundant materials: tin, zinc, oxygen and sulfur. These solar cells had previously achieved an efficiency of about 2%, less than 1/10 of their theoretical potential. Loss mechanisms are systematically investigated and mitigated in solar cells based on p‐type tin monosulfide, SnS, absorber layers combined with n‐type zinc oxysulfide, Zn(O,S) layers that selectively transmit electrons, but block holes. Recombination at grain boundaries is reduced by annealing the SnS films in H2S to form larger grains with fewer grain boundaries. Recombination near the p‐SnS/n‐Zn(O,S) junction is reduced by inserting a few monolayers of SnO2 between these layers. Recombination at the junction is also reduced by adjusting the conduction band offset by tuning the composition of the Zn(O,S), and by reducing its free electron concentration with nitrogen doping. The resulting cells have an efficiency over 4.4%, which is more than twice as large as the highest efficiency obtained previously by solar cells using SnS absorber layers.
Journal
Advanced Energy Materials – Wiley
Published: Oct 1, 2014
Keywords: ; ; ; ;