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Large Magnetoresistance in Scandium Nitride Magnetic Tunnel Junctions Using First Principles

Large Magnetoresistance in Scandium Nitride Magnetic Tunnel Junctions Using First Principles The state‐of‐the‐art magnetic tunnel junction, a cornerstone of spintronic devices and circuits, uses a magnesium oxide tunnel barrier that provides a uniquely large tunnel magnetoresistance at room temperature. However, the wide bandgap and band alignment of magnesium oxide‐iron systems increases the resistance‐area product and creates variability and breakdown challenges. Here, the authors study using first principles narrower‐bandgap scandium nitride (ScN) transport properties in magnetoresistive junctions in comparison to magnesium oxide. The results show a high magnetoresistance in Fe/ScN/Fe via Δ1 and Δ2′ symmetry filtering with low wave function decay rates, suggesting scandium nitride could be a new barrier material for spintronic devices. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Advanced Theory and Simulations Wiley

Large Magnetoresistance in Scandium Nitride Magnetic Tunnel Junctions Using First Principles

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References (46)

Publisher
Wiley
Copyright
© 2021 Wiley‐VCH GmbH
eISSN
2513-0390
DOI
10.1002/adts.202100309
Publisher site
See Article on Publisher Site

Abstract

The state‐of‐the‐art magnetic tunnel junction, a cornerstone of spintronic devices and circuits, uses a magnesium oxide tunnel barrier that provides a uniquely large tunnel magnetoresistance at room temperature. However, the wide bandgap and band alignment of magnesium oxide‐iron systems increases the resistance‐area product and creates variability and breakdown challenges. Here, the authors study using first principles narrower‐bandgap scandium nitride (ScN) transport properties in magnetoresistive junctions in comparison to magnesium oxide. The results show a high magnetoresistance in Fe/ScN/Fe via Δ1 and Δ2′ symmetry filtering with low wave function decay rates, suggesting scandium nitride could be a new barrier material for spintronic devices.

Journal

Advanced Theory and SimulationsWiley

Published: Nov 1, 2021

Keywords: density functional theory; magnetic tunnel junctions; spintronics; tunnel magnetoresistance

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