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M. Abu-Jafar, A. Abu-Labdeh, M. El-hasan (2010)
The energy band gap of ScN in the rocksalt phase obtained with LDA/GGA+USIC approximations in FP-LAPW methodComputational Materials Science, 50
S. Ikeda, Jun Hayakawa, Young Lee, F. Matsukura, Y. Ohno, Takahiro Hanyu, Hideo Ohno (2007)
Magnetic Tunnel Junctions for Spintronic Memories and BeyondIEEE Transactions on Electron Devices, 54
J. Currivan-Incorvia, J. Currivan-Incorvia, Saima Siddiqui, S. Dutta, E. Evarts, Jinshuo Zhang, David Bono, Caroline Ross, Marc Baldo (2016)
Logic circuit prototypes for three-terminal magnetic tunnel junctions with mobile domain wallsNature Communications, 7
J. Zhang, Xiaoguang Zhang, Xiufeng Han (2012)
Spinel oxides: Δ1 spin-filter barrier for a class of magnetic tunnel junctionsApplied Physics Letters, 100
M. Cococcioni, Stefano Gironcoli (2004)
Linear response approach to the calculation of the effective interaction parameters in the LDA + U methodPhysical Review B, 71
L. Xue, A. Kontos, C. Lazik, S. Liang, M. Pakala (2015)
Scalability of Magnetic Tunnel Junctions Patterned by a Novel Plasma Ribbon Beam Etching Process on 300 mm WafersIEEE Transactions on Magnetics, 51
G. Kresse, J. Furthmüller (1996)
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set.Physical review. B, Condensed matter, 54 16
G. Kresse, J. Hafner (1993)
Ab initio molecular dynamics for open-shell transition metals.Physical review. B, Condensed matter, 48 17
Ikhtiar, H. Sukegawa, Xiandong Xu, M. Belmoubarik, Hwachol Lee, S. Kasai, K. Hono (2018)
Giant tunnel magnetoresistance in polycrystalline magnetic tunnel junctions with highly textured MgAl2O4(001) based barriersApplied Physics Letters, 112
W. Eerenstein, L. Kalev, L. Niesen, T. Palstra, T. Hibma (2003)
Magneto-resistance and superparamagnetism in magnetite films on MgO and MgAl2O4Journal of Magnetism and Magnetic Materials, 258
J. Moodera, L. Kinder, Terrilyn Wong, R. Meservey (1995)
Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions.Physical review letters, 74 16
Xiaoguang Zhang, W. Butler, A. Bandyopadhyay (2003)
Effects of the iron-oxide layer in Fe-FeO-MgO-Fe tunneling junctionsPhysical Review B, 68
H. Al-Brithen, A. Smith, D. Gall (2004)
Surface and bulk electronic structure of ScN ( 001 ) investigated by scanning tunneling microscopy/spectroscopy and optical absorption spectroscopyPhysical Review B, 70
Crystallogr
H. Sukegawa, Y. Kato, M. Belmoubarik, P. Cheng, T. Daibou, N. Shimomura, Y. Kamiguchi, J. Ito, H. Yoda, T. Ohkubo, S. Mitani, K. Hono (2016)
MgGa2O4 spinel barrier for magnetic tunnel junctions: Coherent tunneling and low barrier heightApplied Physics Letters, 110
(2015)
Solid-State Comput
P. Blöchl, O. Jepsen, O. Andersen (1994)
Improved tetrahedron method for Brillouin-zone integrations.Physical review. B, Condensed matter, 49 23
Z. Gu, J. Edgar, J. Pomeroy, M. Kuball, D. Coffey (2004)
Crystal growth and properties of scandium nitrideJournal of Materials Science: Materials in Electronics, 15
D. Gall, M. Stadele, K. Järrendahl, I. Petrov, P. Desjardins, R. Haasch, Taeyoon Lee, J. Greene (2001)
Electronic structure of ScN determined using optical spectroscopy, photoemission, and ab initio calculationsPhysical Review B, 63
G. Kresse, J. Furthmüller (1996)
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis setComputational Materials Science, 6
S. Parkin, C. Kaiser, A. Panchula, P. Rice, Brian Hughes, M. Samant, See-Hun Yang (2004)
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriersNature Materials, 3
PWscf User's Guide (v.6.5MaX)
K. Roy, Abhronil Sengupta, Yong Shim (2018)
Perspective: Stochastic magnetic devices for cognitive computingJournal of Applied Physics
Weisheng Zhao, Yue Zhang, T. Devolder, Jacques-Olivier Klein, D. Ravelosona, C. Chappert, P. Mazoyer (2012)
Failure and reliability analysis of STT-MRAMMicroelectron. Reliab., 52
S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. Lee, K. Miura, H. Hasegawa, M. Tsunoda, F. Matsukura, H. Ohno (2008)
Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperatureApplied Physics Letters, 93
Naimul Hassan, Xuan Hu, L. Jiang-Wei, Wesley Brigner, Otitoaleke Akinola, F. García-Sánchez, M. Pasquale, C. Bennett, J. Incorvia, J. Friedman (2018)
Magnetic domain wall neuron with lateral inhibitionJournal of Applied Physics
Yunkun Xie, Jianhua Ma, S. Ganguly, Avik Ghosh (2017)
From materials to systems: a multiscale analysis of nanomagnetic switchingJournal of Computational Electronics, 16
C. Constantin, H. Al-Brithen, M. Haider, D. Ingram, A. Smith (2004)
Publisher's Note: ScGaN alloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phase [Phys. Rev. B 70, 193309 (2004)]
D. Nikonov, G. Bourianoff, T. Ghani (2010)
Proposal of a Spin Torque Majority Gate LogicIEEE Electron Device Letters, 32
P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G. Chiarotti, M. Cococcioni, I. Dabo, A. Corso, Stefano Gironcoli, S. Fabris, G. Fratesi, R. Gebauer, U. Gerstmann, C. Gougoussis, A. Kokalj, M. Lazzeri, L. Martin-Samos, N. Marzari, F. Mauri, R. Mazzarello, S. Paolini, A. Pasquarello, L. Paulatto, C. Sbraccia, S. Scandolo, G. Sclauzero, A. Seitsonen, A. Smogunov, P. Umari, R. Wentzcovitch (2009)
QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materialsJournal of Physics: Condensed Matter, 21
Hasnain Ahmad, J. Atulasimha, Supriyo Bandyopadhyay (2015)
Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, extremely low energy straintronic memoryScientific Reports, 5
K. Momma, F. Izumi (2011)
VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology dataJournal of Applied Crystallography, 44
Dmitri Nikonov, I. Young (2015)
Benchmarking of Beyond-CMOS Exploratory Devices for Logic Integrated CircuitsIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 1
H. Tsukahara, H. Imamura (2019)
First-principles prediction of ultralow resistance-area product and high magnetoresistance ratio in magnetic tunnel junction with a rock-salt type ZnO barrierJapanese Journal of Applied Physics, 58
A. Esmaeili, I. Vakhitov, I. Yanilkin, A. Gumarov, B. Khaliulin, B. Gabbasov, M. Aliyev, R. Yusupov, L. Tagirov (2018)
FMR Studies of Ultra-Thin Epitaxial Pd0.92Fe0.08 FilmApplied Magnetic Resonance, 49
G. Kresse, J. Hafner (1994)
Norm-conserving and ultrasoft pseudopotentials for first-row and transition elementsJournal of Physics: Condensed Matter, 6
H. Noguchi, K. Ikegami, S. Takaya, Eishi Arima, K. Kushida, A. Kawasumi, H. Hara, K. Abe, N. Shimomura, J. Ito, S. Fujita, Takashi Nakada, Hiroshi Nakamura (2016)
7.2 4Mb STT-MRAM-based cache with memory-access-aware power optimization and write-verify-write / read-modify-write scheme2016 IEEE International Solid-State Circuits Conference (ISSCC)
Chang-Eun Kim, K. Ray, V. Lordi (2020)
A density-functional theory study of the Al/AlOx/Al tunnel junctionJournal of Applied Physics, 128
C. Constantin, H. Al-Brithen, M. Haider, D. Ingram, A. Smith (2004)
ScGaN alloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phasePhysical Review B, 70
M. Moreira, J. Bjurström, Ilia Katardjev, V. Yantchev (2011)
Aluminum scandium nitride thin-film bulk acoustic resonators for wide band applicationsVacuum, 86
(2012)
Chappert
C. Park, J. Kan, C. Ching, J. Ahn, L. Xue, R. Wang, A. Kontos, S. Liang, M. Bangar, H. Chen, S. Hassan, S. Kim, M. Pakala, S. Kang (2017)
Temperature Dependence of Critical Device Parameters in 1 Gb Perpendicular Magnetic Tunnel Junction Arrays for STT-MRAMIEEE Transactions on Magnetics, 53
Y. Miura, S. Muramoto, K. Abe, M. Shirai (2012)
First-principles study of tunneling magnetoresistance in Fe/MgAl 2 O 4 /Fe(001) magnetic tunnel junctionsPhysical Review B, 86
J. Kan, C. Park, C. Ching, J. Ahn, L. Xue, R. Wang, A. Kontos, S. Liang, M. Bangar, H. Chen, S. Hassan, S. Kim, M. Pakala, S. Kang (2016)
Systematic validation of 2x nm diameter perpendicular MTJ arrays and MgO barrier for sub-10 nm embedded STT-MRAM with practically unlimited endurance2016 IEEE International Electron Devices Meeting (IEDM)
N. Marzari, D. Vanderbilt, A. Vita, M. Physics, Astronomy, R. University, Infm, Department Engineering, A. Chemistry, U. Trieste, Cavendish Laboratory, U. Cambridge (1999)
THERMAL CONTRACTION AND DISORDERING OF THE AL(110) SURFACEPhysical Review Letters, 82
W. Butler, Xiaoguang Zhang, T. Schulthess, J. Maclaren (2001)
Spin-dependent tunneling conductance of Fe | MgO | Fe sandwichesPhysical Review B, 63
The state‐of‐the‐art magnetic tunnel junction, a cornerstone of spintronic devices and circuits, uses a magnesium oxide tunnel barrier that provides a uniquely large tunnel magnetoresistance at room temperature. However, the wide bandgap and band alignment of magnesium oxide‐iron systems increases the resistance‐area product and creates variability and breakdown challenges. Here, the authors study using first principles narrower‐bandgap scandium nitride (ScN) transport properties in magnetoresistive junctions in comparison to magnesium oxide. The results show a high magnetoresistance in Fe/ScN/Fe via Δ1 and Δ2′ symmetry filtering with low wave function decay rates, suggesting scandium nitride could be a new barrier material for spintronic devices.
Advanced Theory and Simulations – Wiley
Published: Nov 1, 2021
Keywords: density functional theory; magnetic tunnel junctions; spintronics; tunnel magnetoresistance
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