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Inorganic Materials as Hole Selective Contacts and Intermediate Tunnel Junction Layer for Monolithic Perovskite‐CIGSe Tandem Solar Cells

Inorganic Materials as Hole Selective Contacts and Intermediate Tunnel Junction Layer for... In order to surpass the theoretical limitation defined by the Shockley–Queisser equation for photovoltaic solar cells, multijunction devices are needed. Monolithic perovskite‐Cu(In, Ga)(Se, S)2 (CIGSe) tandem solar cells have recently become a hot research topic in photovoltaics because of the emergence of perovskite solar cells with high power conversion efficiency and the development of thin film chalcopyrite CIGSe solar cells with tunable bandgap and low cost manufacturing processes. In this review, some p‐type wide bandgap semiconductors are investigated as intermediate inorganic hole transport materials (IIHTM) and components of a tunnel junction in monolithic perovskite‐CIGSe tandem solar cells, which meet the requirements of band alignment and low‐temperature deposition process. The authors focus on designing a tandem configuration including band alignment, current matching, and optical management, describing some potential candidates of IIHTM owing to their successful implementation in single junction perovskite solar cells and the possibility of application in intermediate layers for tandem devices. Recent progress in the development of inorganic hole conductors is highlighted, and also some of the authors' work on IIHTM and their applications are presented. Finally, future research directions for IIHTM layers and monolithic perovskite‐CIGSe tandem solar cells are presented, with an aim to achieve higher photovoltaic performance than current devices. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Advanced Energy Materials Wiley

Inorganic Materials as Hole Selective Contacts and Intermediate Tunnel Junction Layer for Monolithic Perovskite‐CIGSe Tandem Solar Cells

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References (215)

Publisher
Wiley
Copyright
© 2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
ISSN
1614-6832
eISSN
1614-6840
DOI
10.1002/aenm.201801692
Publisher site
See Article on Publisher Site

Abstract

In order to surpass the theoretical limitation defined by the Shockley–Queisser equation for photovoltaic solar cells, multijunction devices are needed. Monolithic perovskite‐Cu(In, Ga)(Se, S)2 (CIGSe) tandem solar cells have recently become a hot research topic in photovoltaics because of the emergence of perovskite solar cells with high power conversion efficiency and the development of thin film chalcopyrite CIGSe solar cells with tunable bandgap and low cost manufacturing processes. In this review, some p‐type wide bandgap semiconductors are investigated as intermediate inorganic hole transport materials (IIHTM) and components of a tunnel junction in monolithic perovskite‐CIGSe tandem solar cells, which meet the requirements of band alignment and low‐temperature deposition process. The authors focus on designing a tandem configuration including band alignment, current matching, and optical management, describing some potential candidates of IIHTM owing to their successful implementation in single junction perovskite solar cells and the possibility of application in intermediate layers for tandem devices. Recent progress in the development of inorganic hole conductors is highlighted, and also some of the authors' work on IIHTM and their applications are presented. Finally, future research directions for IIHTM layers and monolithic perovskite‐CIGSe tandem solar cells are presented, with an aim to achieve higher photovoltaic performance than current devices.

Journal

Advanced Energy MaterialsWiley

Published: Oct 1, 2018

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