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Ling Yang, Long Cheng, Yi Li, Haoyang Li, Jiancong Li, T. Chang, X. Miao (2021)
Cryptographic Key Generation and In Situ Encryption in One‐Transistor‐One‐Resistor Memristors for Hardware SecurityAdvanced Electronic Materials, 7
H. Wong, Heng-Yuan Lee, Shimeng Yu, Yu-Sheng Chen, Yi Wu, Pang-Shiu Chen, Byoungil Lee, Frederick Chen, M. Tsai (2012)
Metal–Oxide RRAMProceedings of the IEEE, 100
T. Ziegler, R. Waser, D. Wouters, S. Menzel (2020)
In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive SwitchesAdvanced Intelligent Systems, 2
G. Karunaratne, M. Gallo, G. Cherubini, L. Benini, Abbas Rahimi, A. Sebastian (2019)
In-memory hyperdimensional computingNature Electronics, 3
J. Leem, Min Kim, Seung-Ho Choi, Seong‐Ryul Kim, Seong‐Wan Kim, Y. Song, R. Young, Young Kim (2020)
Edible unclonable functionsNature Communications, 11
J. Borghetti, G. Snider, P. Kuekes, J. Yang, D. Stewart, D. Stewart, R. Williams (2010)
‘Memristive’ switches enable ‘stateful’ logic operations via material implicationNature, 464
J. Yoon, Jiaming Zhang, P. Lin, N. Upadhyay, Peng Yan, Yuzi Liu, Q. Xia, J. Yang (2020)
A Low‐Current and Analog Memristor with Ru as Mobile SpeciesAdvanced Materials, 32
A. Sebastian, M. Gallo, R. Khaddam-Aljameh, E. Eleftheriou (2020)
Memory devices and applications for in-memory computingNature Nanotechnology, 15
Zhi Zhou, Xu Chen, En Li, Liekang Zeng, Ke Luo, Junshan Zhang (2019)
Edge Intelligence: Paving the Last Mile of Artificial Intelligence With Edge ComputingProceedings of the IEEE, 107
M. Taha, C. Teuscher (2020)
Approximate Memristive In-Memory Hamming Distance CircuitACM Journal on Emerging Technologies in Computing Systems (JETC), 16
Yukun Ding, Weiwen Jiang, Qiuwen Lou, Jinglan Liu, Jinjun Xiong, X. Hu, Xiaowei Xu, Yiyu Shi (2020)
Hardware design and the competency awareness of a neural networkNature Electronics, 3
J. Reuben, D. Fey, C. Wenger (2019)
A Modeling Methodology for Resistive RAM Based on Stanford-PKU Model With Extended Multilevel CapabilityIEEE Transactions on Nanotechnology, 18
Shahar Kvatinsky, Guy Satat, Nimrod Wald, E. Friedman, A. Kolodny, U. Weiser (2014)
Memristor-Based Material Implication (IMPLY) Logic: Design Principles and MethodologiesIEEE Transactions on Very Large Scale Integration (VLSI) Systems, 22
Yaxiong Zhou, Yi Li, Lei Xu, S. Zhong, Huajun Sun, X. Miao (2015)
16 Boolean logics in three steps with two anti-serially connected memristorsApplied Physics Letters, 106
Chia-Fu Chang, Jui-Yuan Chen, Guan-Min Huang, Ting-Yi Lin, Kuo-Lun Tai, C. Huang, P. Yeh, Wen‐Wei Wu (2018)
Revealing conducting filament evolution in low power and high reliability Fe3O4/Ta2O5 bilayer RRAMNano Energy
Liying Xu, Rui Yuan, Zhenhua Zhu, Keqin Liu, Zhaokun Jing, Yimao Cai, Yu Wang, Yuchao Yang, Ru Huang (2019)
Memristor‐Based Efficient In‐Memory Logic for Cryptologic and Arithmetic ApplicationsAdvanced Materials Technologies, 4
B. Hoffer, V. Rana, S. Menzel, R. Waser, Shahar Kvatinsky (2020)
Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)IEEE Transactions on Electron Devices, 67
W. Shen, Peng Huang, Mengqi Fan, Runze Han, Zheng Zhou, B. Gao, Huaqiang Wu, He Qian, Lifeng Liu, Xiaohui Liu, Xing Zhang, Jinfeng Kang (2019)
Stateful Logic Operations in One-Transistor-One- Resistor Resistive Random Access Memory ArrayIEEE Electron Device Letters, 40
(1951)
Proc
Zhong Sun, E. Ambrosi, A. Bricalli, D. Ielmini (2018)
Logic Computing with Stateful Neural Networks of Resistive SwitchesAdvanced Materials, 30
Peng Huang, Jinfeng Kang, Yudi Zhao, Sijie Chen, Runze Han, Zheng Zhou, Zhe Chen, Wenjia Ma, Mu Li, Lifeng Liu, Xiaoyan Liu (2016)
Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large‐Scale CircuitsAdvanced Materials, 28
Fumin Shen, Yadong Mu, Yang Yang, W. Liu, Li Liu, Jingkuan Song, Heng Shen (2017)
Classification by Retrieval: Binarizing Data and ClassifiersProceedings of the 40th International ACM SIGIR Conference on Research and Development in Information Retrieval
R. Gauchi, Maha Kooli, P. Vivet, J. Noël, E. Beigné, S. Mitra, H. Charles (2019)
Memory Sizing of a Scalable SRAM In-Memory Computing Tile Based Architecture2019 IFIP/IEEE 27th International Conference on Very Large Scale Integration (VLSI-SoC)
Mohammed Zidan, J. Strachan, W. Lu (2018)
The future of electronics based on memristive systemsNature Electronics, 1
Yansong Gao, S. Al-Sarawi, D. Abbott (2020)
Physical unclonable functionsNature Electronics, 3
Yuchen Wang, Lingxiang Hu, Xianhua Wei, F. Zhuge (2020)
Ultralow operation voltages of a transparent memristor based on bilayer ITOApplied Physics Letters, 116
Zhuorui Wang, Yi Li, Yu-Ting Su, Yaxiong Zhou, Long Cheng, T. Chang, K. Xue, S. Sze, X. Miao (2018)
Efficient Implementation of Boolean and Full-Adder Functions With 1T1R RRAMs for Beyond Von Neumann In-Memory ComputingIEEE Transactions on Electron Devices, 65
Ning Ge, J. Yoon, Miao Hu, E. Merced-Grafals, N. Dávila, J. Strachan, Zhiyong Li, H. Holder, Q. Xia, R. Williams, Xing Zhou, J. Yang (2017)
An efficient analog Hamming distance comparator realized with a unipolar memristor array: a showcase of physical computingScientific Reports, 7
K. Ni, Xunzhao Yin, Ann Laguna, S. Joshi, S. Dünkel, M. Trentzsch, Johannes Müller, S. Beyer, M. Niemier, X. Hu, S. Datta (2019)
Author Correction: Ferroelectric ternary content-addressable memory for one-shot learningNature Electronics, 3
V. Zhuo, Yu Jiang, R. Zhao, Luping Shi, Yi Yang, T. Chong, J. Robertson (2013)
Improved Switching Uniformity and Low-Voltage Operation in ${\rm TaO}_{x}$-Based RRAM Using Ge Reactive LayerIEEE Electron Device Letters, 34
Zuheng Wu, Jikai Lu, Tuo Shi, Xiaolong Zhao, Xumeng Zhang, Yang Yang, Facai Wu, Yue Li, Qi Liu, Ming Liu (2020)
A Habituation Sensory Nervous System with MemristorsAdvanced Materials, 32
Rui Liu, Huaqiang Wu, Yachuan Pang, He Qian, Shimeng Yu (2015)
Experimental Characterization of Physical Unclonable Function Based on 1 kb Resistive Random Access Memory ArraysIEEE Electron Device Letters, 36
Hong Jia, Yiu-ming Cheung, Jiming Liu (2016)
A New Distance Metric for Unsupervised Learning of Categorical DataIEEE Transactions on Neural Networks and Learning Systems, 27
Peng Yao, Huaqiang Wu, B. Gao, Jianshi Tang, Qingtian Zhang, Wenqiang Zhang, J. Yang, He Qian (2020)
Fully hardware-implemented memristor convolutional neural networkNature, 577
J. Forney (1966)
Generalized minimum distance decodingIEEE Trans. Inf. Theory, 12
X. Sheng, Catherine Graves, Suhas Kumar, Xuema Li, B. Buchanan, Le Zheng, Sity Lam, Can Li, J. Strachan (2019)
Low‐Conductance and Multilevel CMOS‐Integrated Nanoscale Oxide MemristorsAdvanced Electronic Materials, 5
S. Ambrogio, N. Ciocchini, M. Laudato, V. Milo, A. Pirovano, P. Fantini, D. Ielmini (2016)
Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) SynapsesFrontiers in Neuroscience, 10
Xu Zheng, Jing Liu, Danian Dong, Zhaoan Yu, Jiayou Song, J. Liou, Xiaoxin Xu, Xiaonan Yang (2020)
Back-End-of-Line-Based Resistive RAM in 0.13 μ m Partially-Depleted Silicon-on-Insulator Process for Highly Reliable Irradiation- Resistant ApplicationIEEE Electron Device Letters
Zehui Chen, Clayton Schoeny, L. Dolecek (2018)
Hamming Distance Computation in Unreliable Resistive MemoryIEEE Transactions on Communications, 66
Furqan Zahoor, Tun Zulkifli, F. Khanday (2020)
Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and ApplicationsNanoscale Research Letters, 15
Adedotun Akintayo, Nigel Lee, V. Chawla, Mark Mullaney, C. Marett, Ashutosh Singh, Arti Singh, G. Tylka, B. Ganapathysubramanian, S. Sarkar (2016)
An end-to-end convolutional selective autoencoder approach to Soybean Cyst Nematode eggs detectionArXiv, abs/1603.07834
Jui-Yuan Chen, Chun-Wei Huang, C. Chiu, Yu-Ting Huang, Wen‐Wei Wu (2015)
Switching Kinetic of VCM‐Based Memristor: Evolution and Positioning of NanofilamentAdvanced Materials, 27
Guoming Wang, S. Long, Zhaoan Yu, Meiyun Zhang, Yang Li, D. Xu, H. Lv, Qi Liu, Xiaobing Yan, Ming Wang, Xiaoxin Xu, Hongtao Liu, Bao-he Yang, Ming Liu (2015)
Impact of program/erase operation on the performances of oxide-based resistive switching memoryNanoscale Research Letters, 10
Deming Zhai, Xianming Liu, Hong Chang, Yi Zhen, Xilin Chen, Maozu Guo, Wen Gao (2018)
Parametric local multiview hamming distance metric learningPattern Recognit., 75
Byung Choi, A. Torrezan, J. Strachan, P. Kotula, A. Lohn, M. Marinella, Zhiyong Li, R. Williams, J. Yang (2016)
High‐Speed and Low‐Energy Nitride MemristorsAdvanced Functional Materials, 26
D. Ielmini, H. Wong (2018)
In-memory computing with resistive switching devicesNature Electronics, 1
F. Pan, S. Gao, Chao Chen, C. Song, F. Zeng (2014)
Recent progress in resistive random access memories: Materials, switching mechanisms, and performanceMaterials Science & Engineering R-reports, 83
Zhuorui Wang, Yu-Ting Su, Yi Li, Yaxiong Zhou, Tian-Jian Chu, Kuan‐Chang Chang, T. Chang, T. Tsai, S. Sze, X. Miao (2017)
Functionally Complete Boolean Logic in 1T1R Resistive Random Access MemoryIEEE Electron Device Letters, 38
(2019)
Solid-State Circuits Conf
Yi Cao, Guozhong Xing, Hua Lin, N. Zhang, Hou-zhi Zheng, Kaiyou Wang (2020)
Prospect of Spin-Orbitronic Devices and Their ApplicationsiScience, 23
Shimeng Yu, B. Gao, Zheng-yu Fang, Hongyu Yu, Jinfeng Kang, H. Wong (2013)
A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device VariationAdvanced Materials, 25
D. Ielmini (2016)
Resistive switching memories based on metal oxides: mechanisms, reliability and scalingSemiconductor Science and Technology, 31
Long Cheng, Jiancong Li, Hao‐Xuan Zheng, Peng Yuan, Jiahao Yin, Ling Yang, Q. Luo, Yi Li, H. Lv, T. Chang, X. Miao (2020)
In‐Memory Hamming Weight Calculation in a 1T1R Memristive ArrayAdvanced Electronic Materials, 6
Guilherme Marega, Yanfei Zhao, A. Avsar, Zhenyu Wang, M. Tripathi, A. Radenović, A. Kis (2020)
Logic-in-Memory Based on an Atomically Thin SemiconductorNature, 587
Highly efficient Hamming distance (HD) computations can significantly boost up modern data‐intensive algorithms. However, the traditional complementary metal–oxide–semiconductor devices configured circuits suffer from the huge power consumption with periphery complexity for HD computations. Herein, the implementation of highly reliable and energy efficient in‐memory HD computations in 1 Kb 1‐transistor‐1‐memristor (1T1M) TiN/HfOx/TaOx/TiN array chip is reported. 1T1M devices demonstrate a high on/off ratio of 50, high programming speed of 20 ns, and low energy consumption of 0.224 pJ bit−1. By modulating the 1T1M cell gate and source signal synergistically, the characteristic XOR operations of the binary information are executed in a reliable manner. Importantly, equipped with a stable low resistance state (LRS) distribution (coefficient of variation <11%), the developed 1T1M arrays can implement accurate HD computations between two 8‐bit strings and simultaneously store computing results in the memristors. The complementary studies demonstrate that the stable LRS is attributed to the TaOx built‐in compliance layer which facilitates the transistor surge current reduction during forming and SET, elaborating the significant potential for achieving reliable in‐memory HD computations. Such architecture manifests a 5‐ and 36.89‐fold enhancement of the processing latency and energy efficiency in comparison with latest reports, promoting the fan out of new in‐memory computing applications.
Advanced Materials Technologies – Wiley
Published: Dec 1, 2021
Keywords: 1‐transistor‐1‐memristor; Hamming distance computation; in‐memory computing; memristors arrays chip
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