Get 20M+ Full-Text Papers For Less Than $1.50/day. Start a 14-Day Trial for You or Your Team.

Learn More →

Balance Between Light Absorption and Recombination Losses in Solution‐Processed Small Molecule Solar Cells with Normal or Inverted Structures

Balance Between Light Absorption and Recombination Losses in Solution‐Processed Small Molecule... Comparison of the photovoltaic properties of F3:fullerene bulk heterojunction solar cells (where F3 is a donor molecule of intermediate dimensions) with normal and inverted structures as a function of photoactive layer thickness is carried out by using optical modeling and light‐dependent photoelectrical characterization. The larger short circuit current of inverted devices can be explained by higher light absorption in the active layer, relative to normal devices. However, worse charge extraction conditions and trap‐assisted recombination, in the bulk heterojunction blend in inverted devices, give rise to larger nongeminate recombination losses and an opposite thickness dependence of the short circuit current and fill factor than what is observed in counterparts with the conventional device architecture. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Advanced Energy Materials Wiley

Balance Between Light Absorption and Recombination Losses in Solution‐Processed Small Molecule Solar Cells with Normal or Inverted Structures

Loading next page...
 
/lp/wiley/balance-between-light-absorption-and-recombination-losses-in-solution-70Wq0tnU1h

References (40)

Publisher
Wiley
Copyright
© 2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
ISSN
1614-6832
eISSN
1614-6840
DOI
10.1002/aenm.201801807
Publisher site
See Article on Publisher Site

Abstract

Comparison of the photovoltaic properties of F3:fullerene bulk heterojunction solar cells (where F3 is a donor molecule of intermediate dimensions) with normal and inverted structures as a function of photoactive layer thickness is carried out by using optical modeling and light‐dependent photoelectrical characterization. The larger short circuit current of inverted devices can be explained by higher light absorption in the active layer, relative to normal devices. However, worse charge extraction conditions and trap‐assisted recombination, in the bulk heterojunction blend in inverted devices, give rise to larger nongeminate recombination losses and an opposite thickness dependence of the short circuit current and fill factor than what is observed in counterparts with the conventional device architecture.

Journal

Advanced Energy MaterialsWiley

Published: Oct 1, 2018

Keywords: ; ; ;

There are no references for this article.