Get 20M+ Full-Text Papers For Less Than $1.50/day. Start a 14-Day Trial for You or Your Team.

Learn More →

A Study on Characterization and Prevention of Shadows in Cast Mono‐Crystalline Silicon Ingots

A Study on Characterization and Prevention of Shadows in Cast Mono‐Crystalline Silicon Ingots Dark shadow areas often appear in infrared images of cast monocrystalline silicon (CMC‐Si) ingots. In this work, the formation of shadow and how to avoid it by optimizing the growth process are analyzed. The analysis of scanning electron microscopy & energy dispersive spectroscopy show that the shadows in CMC‐Si are caused by dispersed SiC particles. These particles will further induce a great number of dislocations, subgrain boundaries, and strip‐shaped grains, which decrease the quality and the minority carrier lifetime of CMC‐Si. In addition, an optimized process has proposed and successfully produced a silicon ingot without any shadows. By comparing the traditional and optimized processes, the shadow formation mechanism is studied and found preventing shadow formation by keeping the liquid phase temperature gradient smooth, the maximum crystal growth rate is not more than 1.1 cm h−1 and reducing the value of GL/V below 0.235. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Crystal Research & Technology Wiley

A Study on Characterization and Prevention of Shadows in Cast Mono‐Crystalline Silicon Ingots

Loading next page...
 
/lp/wiley/a-study-on-characterization-and-prevention-of-shadows-in-cast-mono-JY61c1ggD0

References (20)

Publisher
Wiley
Copyright
© 2022 Wiley‐VCH GmbH
eISSN
1521-4079
DOI
10.1002/crat.202100205
Publisher site
See Article on Publisher Site

Abstract

Dark shadow areas often appear in infrared images of cast monocrystalline silicon (CMC‐Si) ingots. In this work, the formation of shadow and how to avoid it by optimizing the growth process are analyzed. The analysis of scanning electron microscopy & energy dispersive spectroscopy show that the shadows in CMC‐Si are caused by dispersed SiC particles. These particles will further induce a great number of dislocations, subgrain boundaries, and strip‐shaped grains, which decrease the quality and the minority carrier lifetime of CMC‐Si. In addition, an optimized process has proposed and successfully produced a silicon ingot without any shadows. By comparing the traditional and optimized processes, the shadow formation mechanism is studied and found preventing shadow formation by keeping the liquid phase temperature gradient smooth, the maximum crystal growth rate is not more than 1.1 cm h−1 and reducing the value of GL/V below 0.235.

Journal

Crystal Research & TechnologyWiley

Published: Apr 1, 2022

Keywords: cast monocrystalline silicon; directional solidification; impurity; shadow

There are no references for this article.