Access the full text.
Sign up today, get DeepDyve free for 14 days.
Huali Zhang, You Da, Chunlai Huang, Wu Yihua, Xu Yan, Wu Peng (2016)
Growth of multicrystalline silicon ingot with both enhanced quality and yield through quartz seeded methodJournal of Crystal Growth, 435
Andriy Lotnyk, J. Bauer, O. Breitenstein, H. Blumtritt (2008)
A TEM study of SiC particles and filaments precipitated in multicrystalline Si for solar cellsSolar Energy Materials and Solar Cells, 92
D. Hu, Shuai Yuan, Liang He, Hongrong Chen, Yuepeng Wan, Xuegong Yu, Deren Yang (2015)
Higher quality mono-like cast silicon with induced grain boundariesSolar Energy Materials and Solar Cells, 140
Zhiqiang Zhang, Qiang Huang, Zhenfei Huang, Bi-Hua Li, Xue Chen (2011)
Analysis of microcrystal formation in DS-silicon ingotScience China Technological Sciences, 54
Shuai Yuan, D. Hu, Xuegong Yu, Liang He, Lei Qi, Hongrong Chen, Zhang Xueri, Xu Yunfei, Deren Yang (2018)
Multicrystalline silicon crystal assisted by silicon flakes as seedsSolar Energy Materials and Solar Cells, 174
Fang Zhang, Xuegong Yu, L. Chao, Shuai Yuan, Xiaodong Zhu, Z. Zhang, Lin Huang, Lei Qi, D. Hu, Deren Yang (2019)
Designing functional Σ13 grain boundaries at seed junctions for high-quality cast quasi-single crystalline siliconSolar Energy Materials and Solar Cells
S. Wang, H. Fang, G. Wei, L. Zhou, N. Zhou (2013)
Transient analysis of the cooling process and influence of bottom insulation on the stress in the multicrystalline silicon ingotCrystal Research and Technology, 48
Changlin Ding, Meiling Huang, Genxiang Zhong, Lijun Liu, Xinming Huang (2014)
Movable partition designed for the seed‐assisted silicon ingot casting in directional solidification processCrystal Research and Technology, 49
F. Sturm, M. Trempa, S. Schwanke, K. Schuck, C. Kranert, C. Reimann, J. Friedrich (2020)
Solid state diffusion of metallic impurities from crucible and coating materials into crystalline silicon ingots for PV applicationJournal of Crystal Growth, 540
M. Trempa, C. Reimann, J. Friedrich, G. Müller, L. Sylla, A. Krause, T. Richter (2015)
Investigation of iron contamination of seed crystals and its impact on lifetime distribution in Quasimono silicon ingotsJournal of Crystal Growth, 429
Huali Zhang, D. Hu, Dejing Zhong, Chunlai Huang, Shuai Yuan, Da You, Xiang Zhang, Yuepeng Wan (2020)
The effect of diffusion barrier on minority carrier lifetime improvement of seed assisted cast silicon ingotJournal of Crystal Growth, 541
Qi Lei, Liang He, Liang Ming, Changxin Tang, Senlin Rao, Lang Zhou (2020)
Growth of high-quality multi-crystalline silicon ingot by using Si particles embedded in the Si3N4 layerJournal of Crystal Growth, 546
X. Gu, Xuegong Yu, K. Guo, L. Chen, D. Wang, Deren Yang (2012)
Seed-assisted cast quasi-single crystalline silicon for photovoltaic application: Towards high efficiency and low cost silicon solar cellsSolar Energy Materials and Solar Cells, 101
(2010)
Principle of Metal Solidification
A. Soiland, E.J Øvrelid, T.A Engh, O. Lohne, J.K Tuset, Ø. Gjerstad (2004)
SiC and Si3N4 inclusions in multicrystalline silicon ingotsMaterials Science in Semiconductor Processing, 7
Hui Zhang, Lili Zheng, Xu-Long Ma, Bo Zhao, Cheng Wang, Fanghua Xu (2011)
Nucleation and bulk growth control for high efficiency silicon ingot castingJournal of Crystal Growth, 318
Fang Zhang, Xuegong Yu, D. Hu, Shuai Yuan, Liang He, R. Hu, Deren Yang (2019)
Controlling dislocation gliding and propagation in quasi-single crystalline silicon by using <110>-oriented seedsSolar Energy Materials and Solar Cells
Liang He, Qi Lei, Senlin Rao, W. Mao, Hongzhi Luo, Yunfei Xu, Cheng Zhou, Jianmin Li, Junling Ding, Xiaojuan Cheng (2021)
Numerical and experimental investigation of octagonal thermal field for improving multi-crystalline silicon ingot qualityVacuum, 185
M. Trempa, C. Reimann, J. Friedrich, G. Müller, A. Krause, L. Sylla, T. Richter (2014)
Defect formation induced by seed-joints during directional solidification of quasi-mono-crystalline silicon ingotsJournal of Crystal Growth, 405
M. Trempa, C. Reimann, J. Friedrich, G. Müller (2010)
The influence of growth rate on the formation and avoidance of C and N related precipitates during directional solidification of multi crystalline siliconJournal of Crystal Growth, 312
Dark shadow areas often appear in infrared images of cast monocrystalline silicon (CMC‐Si) ingots. In this work, the formation of shadow and how to avoid it by optimizing the growth process are analyzed. The analysis of scanning electron microscopy & energy dispersive spectroscopy show that the shadows in CMC‐Si are caused by dispersed SiC particles. These particles will further induce a great number of dislocations, subgrain boundaries, and strip‐shaped grains, which decrease the quality and the minority carrier lifetime of CMC‐Si. In addition, an optimized process has proposed and successfully produced a silicon ingot without any shadows. By comparing the traditional and optimized processes, the shadow formation mechanism is studied and found preventing shadow formation by keeping the liquid phase temperature gradient smooth, the maximum crystal growth rate is not more than 1.1 cm h−1 and reducing the value of GL/V below 0.235.
Crystal Research & Technology – Wiley
Published: Apr 1, 2022
Keywords: cast monocrystalline silicon; directional solidification; impurity; shadow
Read and print from thousands of top scholarly journals.
Already have an account? Log in
Bookmark this article. You can see your Bookmarks on your DeepDyve Library.
To save an article, log in first, or sign up for a DeepDyve account if you don’t already have one.
Copy and paste the desired citation format or use the link below to download a file formatted for EndNote
Access the full text.
Sign up today, get DeepDyve free for 14 days.
All DeepDyve websites use cookies to improve your online experience. They were placed on your computer when you launched this website. You can change your cookie settings through your browser.