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A multiple‐common‐lines method to determine the orientation of snapshot diffraction patterns from single particles

A multiple‐common‐lines method to determine the orientation of snapshot diffraction patterns from... With the development of X‐ray free‐electron lasers (XFELs), it is possible to determine the three‐dimensional structures of noncrystalline objects with coherent X‐ray diffraction imaging. In this diffract‐and‐destroy mode, many snapshot diffraction patterns are obtained from the identical objects which are presented one by one in random orientations to the XFEL beam. Determination of the orientation of an individual object is essential for reconstruction of a three‐dimensional structure. Here a new method, called the multiple‐common‐lines method, has been proposed to determine the orientations of high‐ and low‐signal snapshot diffraction patterns. The mean errors of recovered orientations (α, β, γ) of high‐ and low‐signal patterns are about 0.14, 0.06, 0.12 and 0.77, 0.31, 0.60°, respectively; both sets of errors can meet the requirements of the reconstruction of a three‐dimensional structure. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Acta Crystallographica Section A Foundations of Crystallography Wiley

A multiple‐common‐lines method to determine the orientation of snapshot diffraction patterns from single particles

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References (26)

Publisher
Wiley
Copyright
Copyright © 2014 Wiley Subscription Services, Inc., A Wiley Company
ISSN
0108-7673
eISSN
1600-5724
DOI
10.1107/S2053273314007049
pmid
25970194
Publisher site
See Article on Publisher Site

Abstract

With the development of X‐ray free‐electron lasers (XFELs), it is possible to determine the three‐dimensional structures of noncrystalline objects with coherent X‐ray diffraction imaging. In this diffract‐and‐destroy mode, many snapshot diffraction patterns are obtained from the identical objects which are presented one by one in random orientations to the XFEL beam. Determination of the orientation of an individual object is essential for reconstruction of a three‐dimensional structure. Here a new method, called the multiple‐common‐lines method, has been proposed to determine the orientations of high‐ and low‐signal snapshot diffraction patterns. The mean errors of recovered orientations (α, β, γ) of high‐ and low‐signal patterns are about 0.14, 0.06, 0.12 and 0.77, 0.31, 0.60°, respectively; both sets of errors can meet the requirements of the reconstruction of a three‐dimensional structure.

Journal

Acta Crystallographica Section A Foundations of Crystallography – Wiley

Published: Jul 1, 2014

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