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A 10 nm Short Channel MoS2 Transistor without the Resolution Requirement of Photolithography

A 10 nm Short Channel MoS2 Transistor without the Resolution Requirement of Photolithography MoS2 is considered a promising candidate as a channel material for the next generation semiconductor devices owing to its atomic thickness and electrical properties. However, due to the limited resolution of the photolithography, the short channel length MoS2 transistor is still inclusive. In this work, a method to fabricate MoS2 transistors with short channel length is demonstrated, which is realized by the self‐oxidization of aluminum to form an effective isolation between the source and drain electrodes. By this method, 10 nm transistors with 3.65 nm thick multilayer MoS2 are realized. Despite the short channel length, the devices still exhibit a good on/off ratio. Both the transmission electron microscope image and electrical characteristics reveal the realization of 10 nm short channel, and the simulation results also prove it. Throughout aluminum self‐oxidization technology, transistors with 10 nm channel length can be defined by lithography with 100 nm precision. The 2D transistors with self‐oxidized short channel length reduce the threshold of the 10 nm channel's fabrication, and provide new opportunities for scaling down the 2D material‐based transistors. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Advanced Electronic Materials Wiley

A 10 nm Short Channel MoS2 Transistor without the Resolution Requirement of Photolithography

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References (18)

Publisher
Wiley
Copyright
© 2021 Wiley‐VCH GmbH
eISSN
2199-160X
DOI
10.1002/aelm.202100543
Publisher site
See Article on Publisher Site

Abstract

MoS2 is considered a promising candidate as a channel material for the next generation semiconductor devices owing to its atomic thickness and electrical properties. However, due to the limited resolution of the photolithography, the short channel length MoS2 transistor is still inclusive. In this work, a method to fabricate MoS2 transistors with short channel length is demonstrated, which is realized by the self‐oxidization of aluminum to form an effective isolation between the source and drain electrodes. By this method, 10 nm transistors with 3.65 nm thick multilayer MoS2 are realized. Despite the short channel length, the devices still exhibit a good on/off ratio. Both the transmission electron microscope image and electrical characteristics reveal the realization of 10 nm short channel, and the simulation results also prove it. Throughout aluminum self‐oxidization technology, transistors with 10 nm channel length can be defined by lithography with 100 nm precision. The 2D transistors with self‐oxidized short channel length reduce the threshold of the 10 nm channel's fabrication, and provide new opportunities for scaling down the 2D material‐based transistors.

Journal

Advanced Electronic Materials – Wiley

Published: Dec 1, 2021

Keywords: 10 nm; field effect transistors; MoS 2; short channel

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