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Abstract The structural changes in the surface layers of silicon substrates, implanted by helium ions with energies from 2 to 5 keV and doses to 6 × 1015–5 × 1017 cm−2, has been studied by high-resolution X-ray reflectometry. The damaged layer is found to have a total thickness comparable with the total ion path length (estimated from the SRIM model) and a multilayer structure: a strongly amorphized layer with reduced density, a porous (incapsulated) layer, and a deformed layer. The thickness of sublayers, their density ρ(z), and the mean strain (∼5 × 10−3) have been determined. The characteristic pore size is estimated to be 5–20 nm. It is shown that the presence of a nanoporous layer facilitates the formation of diffuse scattering, which can be used to diagnose layers by high-resolution X-ray reflectometry.
Crystallography Reports – Springer Journals
Published: May 1, 2014
Keywords: Crystallography and Scattering Methods
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