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X-ray diffraction study of the morphology and structure of pulse-anodized porous Si multilayers

X-ray diffraction study of the morphology and structure of pulse-anodized porous Si multilayers Abstract Porous Si layers, obtained by pulsed electrochemical etching of n-Si(001) substrates (resistivity 0.01 Ω cm) in a 1: 1 mixture of hydrofluoric acid and ethanol, have been investigated by high-resolution X-ray diffraction and electron microscopy. The average structural parameters of the layers grown (thickness, strain, porosity, pore size) are determined. It is found that pulsed anodic oxidation leads to a decrease in the average strain of layers. It is established that, at frequencies up to 1 Hz, anodic oxidation makes obtaining porous silicon multilayers with layer thicknesses of 20–300 nm containing Si nanocrystallites possible. It is shown that X-ray diffuse scattering from pores yields information about their ordering and can be used to monitor the processes of electrochemical etching used to form porous layers. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Crystallography Reports Springer Journals

X-ray diffraction study of the morphology and structure of pulse-anodized porous Si multilayers

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References (28)

Publisher
Springer Journals
Copyright
2008 Pleiades Publishing, Ltd.
ISSN
1063-7745
eISSN
1562-689X
DOI
10.1134/s1063774508050039
Publisher site
See Article on Publisher Site

Abstract

Abstract Porous Si layers, obtained by pulsed electrochemical etching of n-Si(001) substrates (resistivity 0.01 Ω cm) in a 1: 1 mixture of hydrofluoric acid and ethanol, have been investigated by high-resolution X-ray diffraction and electron microscopy. The average structural parameters of the layers grown (thickness, strain, porosity, pore size) are determined. It is found that pulsed anodic oxidation leads to a decrease in the average strain of layers. It is established that, at frequencies up to 1 Hz, anodic oxidation makes obtaining porous silicon multilayers with layer thicknesses of 20–300 nm containing Si nanocrystallites possible. It is shown that X-ray diffuse scattering from pores yields information about their ordering and can be used to monitor the processes of electrochemical etching used to form porous layers.

Journal

Crystallography Reports – Springer Journals

Published: Sep 1, 2008

Keywords: Crystallography and Scattering Methods

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