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- Publisher
- Springer Journals
- Copyright
- Copyright © 2002 by MAIK “Nauka/Interperiodica”
- Subject
- Chemistry; Inorganic Chemistry; Industrial Chemistry/Chemical Engineering
- ISSN
- 0020-1685
- eISSN
- 1608-3172
- DOI
- 10.1023/A:1013687024227
- Publisher site
- See Article on Publisher Site
Abstract
Thin PbTe films on Si substrates were doped with Ga via annealing in the vapor produced by heating a Ga(l) + GaTe(s) mixture (GaTe(s) + L 1+ Vequilibrium). Electrical measurements showed that the vapor-phase doping reduced the hole concentration in the films by more than two orders of magnitude. IR irradiation was found to reduce the resistivity of the PbTe<Ga> films by a factor of 40–100. The films annealed in the vapor over GaTe(s) + L 1for the longest time exhibited an anomalous temperature variation of resistance, which was interpreted as due to the limited Ga solubility in PbTe.
Journal
Inorganic Materials – Springer Journals
Published: Sep 29, 2004