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K. Banger, Y. Yamashita, Kiyotaka Mori, R. Peterson, R. Peterson, T. Leedham, J. Rickard, H. Sirringhaus (2011)
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High annealing temperatures have limited the technological potential of solution-processed metal oxide semiconductors. It is now shown that high-quality films can be formed below 250 °C using precursors that are hydrolysed on-chip.
Nature Materials – Springer Journals
Published: Dec 15, 2010
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