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Transistors pick up steam

Transistors pick up steam High annealing temperatures have limited the technological potential of solution-processed metal oxide semiconductors. It is now shown that high-quality films can be formed below 250 °C using precursors that are hydrolysed on-chip. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Nature Materials Springer Journals

Transistors pick up steam

Nature Materials , Volume 10 (1) – Dec 15, 2010

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References (8)

Publisher
Springer Journals
Copyright
Copyright © 2011 by Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved.
Subject
Materials Science; Materials Science, general; Optical and Electronic Materials; Biomaterials; Nanotechnology; Condensed Matter Physics
ISSN
1476-1122
eISSN
1476-4660
DOI
10.1038/nmat2932
Publisher site
See Article on Publisher Site

Abstract

High annealing temperatures have limited the technological potential of solution-processed metal oxide semiconductors. It is now shown that high-quality films can be formed below 250 °C using precursors that are hydrolysed on-chip.

Journal

Nature MaterialsSpringer Journals

Published: Dec 15, 2010

There are no references for this article.