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Tightening grip

Tightening grip Engineering channels for ion transport in a SiGe solid-state electrolyte layer allows one to significantly decrease the spatial and temporal variations of the electrical characteristics in resistive switching memories. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Nature Materials Springer Journals

Tightening grip

Strukov, Dmitri
Nature Materials , Volume 17 (4) – Jan 22, 2018
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References (1)

Publisher
Springer Journals
Copyright
Copyright © 2018 by The Author(s)
Subject
Materials Science; Materials Science, general; Optical and Electronic Materials; Biomaterials; Nanotechnology; Condensed Matter Physics
ISSN
1476-1122
eISSN
1476-4660
DOI
10.1038/s41563-018-0020-x
Publisher site
See Article on Publisher Site

Abstract

Engineering channels for ion transport in a SiGe solid-state electrolyte layer allows one to significantly decrease the spatial and temporal variations of the electrical characteristics in resistive switching memories.

Journal

Nature Materials – Springer Journals

Published: Jan 22, 2018

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