Get 20M+ Full-Text Papers For Less Than $1.50/day. Start a 14-Day Trial for You or Your Team.

Learn More →

Thickness Effect of Polar Polymer Films on the Characteristics of Organic Memory Transistors

Thickness Effect of Polar Polymer Films on the Characteristics of Organic Memory Transistors Organic memory transistors based on an organic field-effect transistor (OFET) structure were fabricated by employing a water-soluble polar polymer, poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPSA). The thickness of PAMPSA films was varied from 180 nm to 1000 nm and thermally annealed (treated) at 170 °C for 30 min. The annealed PAMPSA films were optically transparent with naked eyes even though the absorbance at the wavelength range of ca. 190∼260 nm gradually increased with the film thickness. The devices with the annealed PAMPSA films showed p-channel transistor characteristics at low operation voltages (0∼-5 V) and delivered hysteresis of drain current due to the carbon radical-induced dipoles in the thermally annealed PAMPSA films. The best hysteresis characteristics were obtained at the film thickness of 450 nm, whereas the drain current was gradually decreased with the thickness of PAMPSA films. This result has been assigned to the trade-off effect between the capacitance decrease and the dipole increase the PAMPSA thickness increases. The optimized memory devices with the 450 nm-thick PAMPSA layers disclosed excellent retention characteristics during >10,000 cycles of writing-reading-erasing-reading memory tests.[graphic not available: see fulltext] http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Macromolecular Research Springer Journals

Thickness Effect of Polar Polymer Films on the Characteristics of Organic Memory Transistors

Download PDF
5 pages

Loading next page...
 
/lp/springer-journals/thickness-effect-of-polar-polymer-films-on-the-characteristics-of-s3rjDQ44Ha

References (38)

Publisher
Springer Journals
Copyright
Copyright © The Polymer Society of Korea and Springer 2021
ISSN
1598-5032
eISSN
2092-7673
DOI
10.1007/s13233-021-9103-7
Publisher site
See Article on Publisher Site

Abstract

Organic memory transistors based on an organic field-effect transistor (OFET) structure were fabricated by employing a water-soluble polar polymer, poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPSA). The thickness of PAMPSA films was varied from 180 nm to 1000 nm and thermally annealed (treated) at 170 °C for 30 min. The annealed PAMPSA films were optically transparent with naked eyes even though the absorbance at the wavelength range of ca. 190∼260 nm gradually increased with the film thickness. The devices with the annealed PAMPSA films showed p-channel transistor characteristics at low operation voltages (0∼-5 V) and delivered hysteresis of drain current due to the carbon radical-induced dipoles in the thermally annealed PAMPSA films. The best hysteresis characteristics were obtained at the film thickness of 450 nm, whereas the drain current was gradually decreased with the thickness of PAMPSA films. This result has been assigned to the trade-off effect between the capacitance decrease and the dipole increase the PAMPSA thickness increases. The optimized memory devices with the 450 nm-thick PAMPSA layers disclosed excellent retention characteristics during >10,000 cycles of writing-reading-erasing-reading memory tests.[graphic not available: see fulltext]

Journal

Macromolecular Research – Springer Journals

Published: Dec 1, 2021

Keywords: organic memory transistor; OFET; polar polymer; thickness effect; hysteresis

There are no references for this article.