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Thermoelectric Properties of the Layered Compound GeBi4Te7 Doped with Copper

Thermoelectric Properties of the Layered Compound GeBi4Te7 Doped with Copper The effect of Cu doping (0.05–0.20 at. %) on the thermoelectric and transport properties of the layered compound GeBi4Te7 (with a small Ge deficiency) was studied. According to x-ray diffraction data obtained on cleaved (001) surfaces, Cu doping increases the c cell parameter, presumably because some of the Cu atoms are incorporated in the van der Waals gaps between the five- and seven-layer slabs. In addition, Cu doping reduces lattice thermal conductivity and increases electron mobility. The thermoelectric figure of merit of the material with the optimum Cu content (0.05 at. %) is ZT = 0.65 around 330 K. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Inorganic Materials Springer Journals

Thermoelectric Properties of the Layered Compound GeBi4Te7 Doped with Copper

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References (14)

Publisher
Springer Journals
Copyright
Copyright © 2002 by MAIK “Nauka/Interperiodica”
Subject
Chemistry; Inorganic Chemistry; Industrial Chemistry/Chemical Engineering
ISSN
0020-1685
eISSN
1608-3172
DOI
10.1023/A:1019722726551
Publisher site
See Article on Publisher Site

Abstract

The effect of Cu doping (0.05–0.20 at. %) on the thermoelectric and transport properties of the layered compound GeBi4Te7 (with a small Ge deficiency) was studied. According to x-ray diffraction data obtained on cleaved (001) surfaces, Cu doping increases the c cell parameter, presumably because some of the Cu atoms are incorporated in the van der Waals gaps between the five- and seven-layer slabs. In addition, Cu doping reduces lattice thermal conductivity and increases electron mobility. The thermoelectric figure of merit of the material with the optimum Cu content (0.05 at. %) is ZT = 0.65 around 330 K.

Journal

Inorganic MaterialsSpringer Journals

Published: Sep 29, 2004

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