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Thermal Oxidation of Ti and Pb Thin Films Deposited on Single-Crystal Silicon

Thermal Oxidation of Ti and Pb Thin Films Deposited on Single-Crystal Silicon Thin Pb–Ti–O films on single-crystal Si were prepared by magnetron sputtering followed by thermal oxidation of Pb/Ti/Si and Ti/Pb/Si structures. Oxidation of Pb/Ti bilayers was found to yield lead oxides, which then react with Ti to form lead titanate. Ti/Pb bilayers on Si could be converted into stoichiometric lead titanate, through titanium and lead oxides, by oxidation between 870 and 1070 K. Some of the films exhibited ferroelectric properties. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Inorganic Materials Springer Journals

Thermal Oxidation of Ti and Pb Thin Films Deposited on Single-Crystal Silicon

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References (6)

Publisher
Springer Journals
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Chemistry; Inorganic Chemistry; Industrial Chemistry/Chemical Engineering
ISSN
0020-1685
eISSN
1608-3172
DOI
10.1023/A:1017520632133
Publisher site
See Article on Publisher Site

Abstract

Thin Pb–Ti–O films on single-crystal Si were prepared by magnetron sputtering followed by thermal oxidation of Pb/Ti/Si and Ti/Pb/Si structures. Oxidation of Pb/Ti bilayers was found to yield lead oxides, which then react with Ti to form lead titanate. Ti/Pb bilayers on Si could be converted into stoichiometric lead titanate, through titanium and lead oxides, by oxidation between 870 and 1070 K. Some of the films exhibited ferroelectric properties.

Journal

Inorganic MaterialsSpringer Journals

Published: Oct 8, 2004

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