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Supramolecular organization in ultra-thin films of α-sexithiophene on silicon dioxide

Supramolecular organization in ultra-thin films of α-sexithiophene on silicon dioxide The supramolecular organization of organic semiconductors on the dielectric layer of thin-film field-effect transistors is a crucial factor in achieving good device performance. Charge transport in these devices occurs near the interface with the gate dielectric. By confocal spectroscopy and microscopy we study the supramolecular organization in ultra-thin films of a prototype organic semiconductor, α-sexithiophene, on silicon dioxide, a widely used transistor gate dielectric. We demonstrate that in submonolayer films of sexithiophene (T6), regions where the molecules stand on their long molecular axis coexist with regions where the molecules lie flat on the substrate. When the first monolayer is completed, all T6 molecules stand on the substrate, and the flat molecules detected in the submonolayer films are no longer present. In films thicker than two monolayers, the photoluminescence spectra of standing molecules show a molecular H-like aggregation as in the single crystal. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Nature Materials Springer Journals

Supramolecular organization in ultra-thin films of α-sexithiophene on silicon dioxide

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References (38)

Publisher
Springer Journals
Copyright
Copyright © 2004 by Nature Publishing Group
Subject
Materials Science; Materials Science, general; Optical and Electronic Materials; Biomaterials; Nanotechnology; Condensed Matter Physics
ISSN
1476-1122
eISSN
1476-4660
DOI
10.1038/nmat1279
Publisher site
See Article on Publisher Site

Abstract

The supramolecular organization of organic semiconductors on the dielectric layer of thin-film field-effect transistors is a crucial factor in achieving good device performance. Charge transport in these devices occurs near the interface with the gate dielectric. By confocal spectroscopy and microscopy we study the supramolecular organization in ultra-thin films of a prototype organic semiconductor, α-sexithiophene, on silicon dioxide, a widely used transistor gate dielectric. We demonstrate that in submonolayer films of sexithiophene (T6), regions where the molecules stand on their long molecular axis coexist with regions where the molecules lie flat on the substrate. When the first monolayer is completed, all T6 molecules stand on the substrate, and the flat molecules detected in the submonolayer films are no longer present. In films thicker than two monolayers, the photoluminescence spectra of standing molecules show a molecular H-like aggregation as in the single crystal.

Journal

Nature MaterialsSpringer Journals

Published: Dec 5, 2004

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