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Study of the amorphization of surface silicon layers implanted by low-energy helium ions

Study of the amorphization of surface silicon layers implanted by low-energy helium ions Abstract The structural changes in surface layers of Si(001) substrates subjected to plasma-immersion implantation by (2–5)-keV helium ions to a dose of D = 6 × 1015–5 × 1017 cm–2 have been studied by highresolution X-ray diffraction, Rutherford backscattering, and spectral ellipsometry. It is found that the joint application of these methods makes it possible to determine the density depth distribution ρ(z) in an implanted layer, its phase state, and elemental composition. Treatment of silicon substrates in helium plasma to doses of 6 × 1016 cm–2 leads to the formation of a 20- to 30-nm-thick amorphized surface layer with a density close to the silicon density. An increase in the helium dose causes the formation of an internal porous layer. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Crystallography Reports Springer Journals

Study of the amorphization of surface silicon layers implanted by low-energy helium ions

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References (18)

Publisher
Springer Journals
Copyright
2016 Pleiades Publishing, Inc.
ISSN
1063-7745
eISSN
1562-689X
DOI
10.1134/s1063774516020127
Publisher site
See Article on Publisher Site

Abstract

Abstract The structural changes in surface layers of Si(001) substrates subjected to plasma-immersion implantation by (2–5)-keV helium ions to a dose of D = 6 × 1015–5 × 1017 cm–2 have been studied by highresolution X-ray diffraction, Rutherford backscattering, and spectral ellipsometry. It is found that the joint application of these methods makes it possible to determine the density depth distribution ρ(z) in an implanted layer, its phase state, and elemental composition. Treatment of silicon substrates in helium plasma to doses of 6 × 1016 cm–2 leads to the formation of a 20- to 30-nm-thick amorphized surface layer with a density close to the silicon density. An increase in the helium dose causes the formation of an internal porous layer.

Journal

Crystallography Reports – Springer Journals

Published: Mar 1, 2016

Keywords: Crystallography and Scattering Methods

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