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Resonant tunnelling and fast switching in amorphous-carbon quantum-well structures

Resonant tunnelling and fast switching in amorphous-carbon quantum-well structures The need for fast electronic devices working under extreme conditions, particularly at high temperature and high voltage, led researchers to investigate the use of films based on diamond 1,2,3 , graphitic carbon 4 , amorphous carbon 5 and other carbon nanostructures 6 . In parallel, a different class of materials including disordered organic 7,8 and inorganic 9,10,11 materials has been studied, particularly for fast switching and large-area inexpensive electronics based on quantum transport 9,12 . However, fast-switching devices of amorphous semiconductors based on negative differential resistance or resonant tunnelling has not been achieved so far 13,14 . Here, we show negative differential resistance peaks, quantized conductance and bias-induced switching with a high-frequency response from amorphous-carbon quantum-well structures. We also demonstrate sufficiently large values for the phase-coherence length and delocalized conduction in these band-modulated low-dimensional disordered carbon structures, which could lead to a new generation of unusual fast-switching devices. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Nature Materials Springer Journals

Resonant tunnelling and fast switching in amorphous-carbon quantum-well structures

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References (23)

Publisher
Springer Journals
Copyright
Copyright © 2006 by Nature Publishing Group
Subject
Materials Science; Materials Science, general; Optical and Electronic Materials; Biomaterials; Nanotechnology; Condensed Matter Physics
ISSN
1476-1122
eISSN
1476-4660
DOI
10.1038/nmat1551
Publisher site
See Article on Publisher Site

Abstract

The need for fast electronic devices working under extreme conditions, particularly at high temperature and high voltage, led researchers to investigate the use of films based on diamond 1,2,3 , graphitic carbon 4 , amorphous carbon 5 and other carbon nanostructures 6 . In parallel, a different class of materials including disordered organic 7,8 and inorganic 9,10,11 materials has been studied, particularly for fast switching and large-area inexpensive electronics based on quantum transport 9,12 . However, fast-switching devices of amorphous semiconductors based on negative differential resistance or resonant tunnelling has not been achieved so far 13,14 . Here, we show negative differential resistance peaks, quantized conductance and bias-induced switching with a high-frequency response from amorphous-carbon quantum-well structures. We also demonstrate sufficiently large values for the phase-coherence length and delocalized conduction in these band-modulated low-dimensional disordered carbon structures, which could lead to a new generation of unusual fast-switching devices.

Journal

Nature Materials – Springer Journals

Published: Dec 25, 2005

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