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T. Schenkel, A. Persaud, S. Park, J. Nilsson, J. Bokor, J. Liddle, R. Keller, D. Schneider, D. Cheng, D. Humphries (2003)
Solid state quantum computer development in silicon with single ion implantationJournal of Applied Physics, 94
Leland Chang, Yang-Kyu Choi, Daewon Ha, P. Ranade, Shiying Xiong, J. Bokor, C. Hu, T. King (2003)
Extremely scaled silicon nano-CMOS devicesProc. IEEE, 91
T. Shinada, Atsuki Ishikawa, M. Fujita, K. Yamashita, I. Ohdomari (1999)
Influence of Secondary Electron Detection Efficiency on Controllability of Dopant Ion Number in Single Ion ImplantationJapanese Journal of Applied Physics, 38
Jiwoong Park, A. Pasupathy, Jonas Goldsmith, C. Chang, Y. Yaish, J. Petta, M. Rinkoski, J. Sethna, H. Abruña, P. McEuen, D. Ralph (2002)
Coulomb blockade and the Kondo effect in single-atom transistorsNature, 417
D. Jamieson, Changyi Yang, T. Hopf, S. Hearne, C. Pakes, S. Prawer, M. Mitic, E. Gauja, S. Andresen, F. Hudson, A. Dzurak, R. Clark (2005)
Controlled shallow single ion implantation in silicon using an active substrate for sub-20 keV ionsApplied Physics Letters, 86
F. Jelezko, T. Gaebel, I. Popa, M. Domhan, A. Gruber, J. Wrachtrup (2004)
Observation of coherent oscillation of a single nuclear spin and realization of a two-qubit conditional quantum gate.Physical review letters, 93 13
A. Persaud, S. Park, J. Liddle, T. Schenkel, J. Bokor, I. Rangelow (2005)
Integration of scanning probes and ion beams.Nano letters, 5 6
T. Shinada, Hikaru Koyama, Chie Hinoshita, K. Imamura, I. Ohdomari (2002)
Improvement of Focused Ion-Beam Optics in Single-Ion Implantation for Higher Aiming Precision of One-by-One Doping of Impurity Atoms into Nano-Scale Semiconductor DevicesJapanese Journal of Applied Physics, 41
T. Shinada, S. Okamoto, Takahiro Kobayashi, I. Ohdomari (2005)
Enhancing semiconductor device performance using ordered dopant arraysNature, 437
B. Kane (1998)
A silicon-based nuclear spin quantum computerNature, 393
Single-ion implantation enables tuning of transistor performance, one dopant atom at a time.
Nature Materials – Springer Journals
Published: Nov 1, 2005
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