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Polytropy of group IV and VI dopants in bismuth crystals

Polytropy of group IV and VI dopants in bismuth crystals Polytropy of Group IV and VI dopants in bismuth crystals was revealed. The crystals doped with Sn and Pb were found to contain eutectic inclusions. The dopant atoms present in the inclusions exhibited insignificant electrical activity, as evidenced by specimen-current imaging. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Inorganic Materials Springer Journals

Polytropy of group IV and VI dopants in bismuth crystals

Inorganic Materials , Volume 36 (7) – Nov 18, 2007

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References (4)

Publisher
Springer Journals
Copyright
Copyright © 2000 by MAIK “Nauka/Interperiodica”
Subject
Chemistry; Inorganic Chemistry; Industrial Chemistry/Chemical Engineering; Materials Science
ISSN
0020-1685
eISSN
1608-3172
DOI
10.1007/BF02758417
Publisher site
See Article on Publisher Site

Abstract

Polytropy of Group IV and VI dopants in bismuth crystals was revealed. The crystals doped with Sn and Pb were found to contain eutectic inclusions. The dopant atoms present in the inclusions exhibited insignificant electrical activity, as evidenced by specimen-current imaging.

Journal

Inorganic MaterialsSpringer Journals

Published: Nov 18, 2007

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