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Nonlinear anomalous Hall effect in few-layer WTe2

Nonlinear anomalous Hall effect in few-layer WTe2 The Hall effect occurs only in systems with broken time-reversal symmetry, such as materials under an external magnetic field in the ordinary Hall effect and magnetic materials in the anomalous Hall effect (AHE) 1 . Here we show a nonlinear AHE in a non-magnetic material under zero magnetic field, in which the Hall voltage depends quadratically on the longitudinal current 2–6 . We observe the effect in few-layer T d-WTe2, a two-dimensional semimetal with broken inversion symmetry and only one mirror line in the crystal plane. Our angle-resolved electrical measurements reveal that the Hall voltage maximizes (vanishes) when the bias current is perpendicular (parallel) to the mirror line. The observed effect can be understood as an AHE induced by the bias current, which generates an out-of-plane magnetization. The temperature dependence of the Hall conductivity further suggests that both the intrinsic Berry curvature dipole and extrinsic spin-dependent scatterings contribute to the observed nonlinear AHE. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Nature Materials Springer Journals

Nonlinear anomalous Hall effect in few-layer WTe2

Nature Materials , Volume 18 (4) – Feb 25, 2019

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References (37)

Publisher
Springer Journals
Copyright
Copyright © 2019 by The Author(s), under exclusive licence to Springer Nature Limited
Subject
Materials Science; Materials Science, general; Optical and Electronic Materials; Biomaterials; Nanotechnology; Condensed Matter Physics
ISSN
1476-1122
eISSN
1476-4660
DOI
10.1038/s41563-019-0294-7
Publisher site
See Article on Publisher Site

Abstract

The Hall effect occurs only in systems with broken time-reversal symmetry, such as materials under an external magnetic field in the ordinary Hall effect and magnetic materials in the anomalous Hall effect (AHE) 1 . Here we show a nonlinear AHE in a non-magnetic material under zero magnetic field, in which the Hall voltage depends quadratically on the longitudinal current 2–6 . We observe the effect in few-layer T d-WTe2, a two-dimensional semimetal with broken inversion symmetry and only one mirror line in the crystal plane. Our angle-resolved electrical measurements reveal that the Hall voltage maximizes (vanishes) when the bias current is perpendicular (parallel) to the mirror line. The observed effect can be understood as an AHE induced by the bias current, which generates an out-of-plane magnetization. The temperature dependence of the Hall conductivity further suggests that both the intrinsic Berry curvature dipole and extrinsic spin-dependent scatterings contribute to the observed nonlinear AHE.

Journal

Nature MaterialsSpringer Journals

Published: Feb 25, 2019

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