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References (35)
-
H. Sohn M. Luysberg (1998)
10.1063/1.366723J. Appl. Phys., 83
-
R. M. Melloch E. S. Harmon (1993)
10.1063/1.110542Appl. Phys. Lett., 63
-
M. Y. Frankel S. Gupta (1991)
10.1063/1.105729Appl. Phys. Lett., 59
-
J.-W. Pan M. N. Chang (1998)
10.1063/1.120814Appl. Phys. Lett., 72
-
M. Henini L. Pavesi (1995)
10.1063/1.113449Appl. Phys. Lett., 66
-
C. S. Barrett D. Schiferl (1969)
10.1107/S0021889869006443J. Appl. Crystallogr., 2
-
R. J. B. Dietz H. Roehle (2010)
10.1364/OE.18.002296Optics Express, 18
-
A. W. Jackson C. Kadow (2001)
10.1016/S1386-9477(99)00314-8Physica E, 7
-
A . Claverie and Z . Liliental - Weber -
Q. Hu N. Zamdmer (1999)
10.1063/1.125008Appl. Phys. Lett., 75
-
A. Krotkus (2010)
10.1088/0022-3727/43/27/273001J. Phys. D: Appl. Phys., 43
-
G. M. Turner M. C. Breard (2001)
10.1063/1.1416140J. Appl. Phys., 90
-
D. Gonzales M. Gutierrez (2001)
10.1016/S0921-5107(00)00579-1Mater. Sci. Eng. B, 80
-
D. C. Look (1991)
10.1063/1.349295J. Appl. Phys., 70
-
E. A. Klimov G. B. Galiev (2017)
10.1134/S1063774517010072Crystallogr. Rep., 62
-
D. C. Walters D. C. Look (1993)
10.1063/1.354108J. Appl. Phys., 74
-
L. Pavesi F. Piazza (1992)
10.1088/0268-1242/7/12/014Semicond. Sci. Technol., 7
-
J. M. Woodall A. C. Warren (1990)
10.1063/1.103474Appl. Phys. Lett., 57
-
A. W. Jackson C. Kadow (2000)
10.1063/1.126690Appl. Phys. Lett., 76
-
M. Missous I. Kostakis (2013)
10.1063/1.4824011AIP Adv., 3
-
K. Hirakawa K. Agawa (1994)
10.1063/1.112136Appl. Phys. Lett., 65
-
F. Börner J. Gebauer (2000)
10.1063/1.373549J. Appl. Phys., 87
-
Sh. Kitazawa Y. Kamo (2014)
10.7567/JJAP.53.032201Jpn. J. Appl. Phys., 53
-
K. Bertulis A. Krotkus (1999)
10.1063/1.125343Appl. Phys. Lett., 75
-
R. C. Lutz P. Specht (1999)
10.1116/1.590747J. Vac. Sci. Technol. B, 17
-
K. Bertulis A. Krotkus (2003)
10.1049/ip-opt:20020435IEE Proc. J. Optoelectron., 149
-
Fundamentals of Semiconductor Materials Science and Technology I. A. Sluchinskaya (2002)
[in Russian] -
J.-F. Roux J.-L. Coutaz (2000)
J.-L. Coutaz, J.-F. Roux, A. Gaarder, et al., XI Int. Semiconducting and Insulating Materials Conf., Canberra, Australia,2000, p. 89. -
J. M. Feng T. Ohachi (1999)
10.1016/S0026-2692(98)00155-4Microelectron. J., 30
-
J.-L. Coutaz J.-F. Roux (1999)
10.1063/1.123881Appl. Phys. Lett., 74
-
S. Leong P. Specht (1997)
P. Specht, S. Leong, H. Sohn, et al., Mater. Sci. Forum. 258–263, 951 (1997). -
H. Thomas J. K. Luo (1996)
10.1063/1.361417J. Appl. Phys., 79
-
Z. Liliental-Weber A. Claverie (1993)
10.1016/0921-5107(93)90222-9Mater. Sci. Eng. B, 22
-
(2002)
Sluchinskaya, Fundamentals of Semiconductor Materials Science and Technology (Mir, Moscow, 2002) [in Russian -
V. E. Kaminskii G. B. Galiev (2001)
10.1134/1.1365185Semiconductors, 35
- Publisher
- Springer Journals
- Copyright
- 2019 Pleiades Publishing, Inc.
- ISSN
- 1063-7745
- eISSN
- 1562-689X
- DOI
- 10.1134/s1063774519020111
- Publisher site
- See Article on Publisher Site
Abstract
Abstract The structural characteristics of a new structure for photoconductive antennas have been investigated. This structure is a multilayered epitaxial film grown on a GaAs(111)A substrate; it consists of alternating undoped low-temperature grown GaAs (LTG-GaAs) layers and GaAs layers synthesized in the standard high-temperature regime and doped with silicon (GaAs:Si). The As4/Ga flow ratio γ is chosen such as to produce p-type GaAs:Si layers. LTG-GaAs layers were grown at an enlarged γ value. The samples grown on GaAs(100) substrates were single-crystal, whereas the single-crystal growth on GaAs(111)A substrates changed to polycrystalline when the film thickness reached 320–340 nm. The sizes of As precipitates in annealed samples, their distribution over the film thickness, and specific features of their crystal structure have been analyzed.
Journal
Crystallography Reports – Springer Journals
Published: Mar 1, 2019
Keywords: Crystallography and Scattering Methods