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Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor The recent discovery of graphene 1,2,3 has led to many advances in two-dimensional physics and devices 4,5 . The graphene devices fabricated so far have relied on SiO2 back gating 1,2,3 . Electrochemical top gating is widely used for polymer transistors 6,7 , and has also been successfully applied to carbon nanotubes 8,9 . Here we demonstrate a top-gated graphene transistor that is able to reach doping levels of up to 5×1013 cm−2, which is much higher than those previously reported. Such high doping levels are possible because the nanometre-thick Debye layer 8,10 in the solid polymer electrolyte gate provides a much higher gate capacitance than the commonly used SiO2 back gate, which is usually about 300 nm thick 11 . In situ Raman measurements monitor the doping. The G peak stiffens and sharpens for both electron and hole doping, but the 2D peak shows a different response to holes and electrons. The ratio of the intensities of the G and 2D peaks shows a strong dependence on doping, making it a sensitive parameter to monitor the doping. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Nature Nanotechnology Springer Journals

Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

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References (39)

Publisher
Springer Journals
Copyright
Copyright © 2008 by Nature Publishing Group
Subject
Materials Science; Materials Science, general; Nanotechnology; Nanotechnology and Microengineering
ISSN
1748-3387
eISSN
1748-3395
DOI
10.1038/nnano.2008.67
Publisher site
See Article on Publisher Site

Abstract

The recent discovery of graphene 1,2,3 has led to many advances in two-dimensional physics and devices 4,5 . The graphene devices fabricated so far have relied on SiO2 back gating 1,2,3 . Electrochemical top gating is widely used for polymer transistors 6,7 , and has also been successfully applied to carbon nanotubes 8,9 . Here we demonstrate a top-gated graphene transistor that is able to reach doping levels of up to 5×1013 cm−2, which is much higher than those previously reported. Such high doping levels are possible because the nanometre-thick Debye layer 8,10 in the solid polymer electrolyte gate provides a much higher gate capacitance than the commonly used SiO2 back gate, which is usually about 300 nm thick 11 . In situ Raman measurements monitor the doping. The G peak stiffens and sharpens for both electron and hole doping, but the 2D peak shows a different response to holes and electrons. The ratio of the intensities of the G and 2D peaks shows a strong dependence on doping, making it a sensitive parameter to monitor the doping.

Journal

Nature NanotechnologySpringer Journals

Published: Mar 30, 2008

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