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Microstructural study of thin films of 5mol% gadolinia doped ceria prepared by pulsed laser ablation

Microstructural study of thin films of 5mol% gadolinia doped ceria prepared by pulsed laser ablation Microstructural characterization of thin films of 5 mol% gadolinia doped ceria films deposited by pulsed laser ablation in the energy range 100–600 mJ/pulse has been investigated, as deposited films were found to be nanocrystalline with preferred orientation. X-ray diffraction analysis revealed that the size of the nanocrystals of doped ceria does not vary significantly with increasing laser energy, whereas transmission electron microscopy study showed a uniform distribution of nanocrystal of 8–10 nm for energies ≤200 mJ/pulse and nanocrystals embedded in a large crystalline matrix of doped ceria for energies in the range 400–600 mJ/pulse. Although the laser-ablated films were totally free from secondary phases, lattice imaging of the large grained doped ceria showed growth-induced defects, such as dislocations and ledges. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Ionics Springer Journals

Microstructural study of thin films of 5mol% gadolinia doped ceria prepared by pulsed laser ablation

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References (2)

Publisher
Springer Journals
Copyright
Copyright © 2007 by Springer-Verlag
Subject
Chemistry; Electrochemistry; Renewable and Green Energy; Optical and Electronic Materials; Condensed Matter Physics; Energy Storage
ISSN
0947-7047
eISSN
1862-0760
DOI
10.1007/s11581-006-0061-z
Publisher site
See Article on Publisher Site

Abstract

Microstructural characterization of thin films of 5 mol% gadolinia doped ceria films deposited by pulsed laser ablation in the energy range 100–600 mJ/pulse has been investigated, as deposited films were found to be nanocrystalline with preferred orientation. X-ray diffraction analysis revealed that the size of the nanocrystals of doped ceria does not vary significantly with increasing laser energy, whereas transmission electron microscopy study showed a uniform distribution of nanocrystal of 8–10 nm for energies ≤200 mJ/pulse and nanocrystals embedded in a large crystalline matrix of doped ceria for energies in the range 400–600 mJ/pulse. Although the laser-ablated films were totally free from secondary phases, lattice imaging of the large grained doped ceria showed growth-induced defects, such as dislocations and ledges.

Journal

Ionics – Springer Journals

Published: Jan 4, 2007

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