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Growth and structure of La 3 Zr 0.5 Ga 5 Si 0.5 O 14 crystals

Growth and structure of La 3 Zr 0.5 Ga 5 Si 0.5 O 14 crystals Abstract The complete X-ray structure determination of Czochralski grown La3Zr0.5Ga5Si0.5O14 single crystals with the Ca3Ga2Ge4O14 structure is performed (sp. gr. P321, a = 8.226(1) Å, c = 5.1374(6) Å, Z = 1, Mo K α 1 radiation, 1920 crystallographically independent reflections, R = 0.0166, R w = 0.0192). The absolute structure is determined. It is shown that possible transition of some of La atoms (∼1.2%) from the 3e to 6g position may give rise to the formation of structural defects. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Crystallography Reports Springer Journals

Growth and structure of La 3 Zr 0.5 Ga 5 Si 0.5 O 14 crystals

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References (6)

Publisher
Springer Journals
Copyright
2004 MAIK "Nauka/Interperiodica"
ISSN
1063-7745
eISSN
1562-689X
DOI
10.1134/1.1643964
Publisher site
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Abstract

Abstract The complete X-ray structure determination of Czochralski grown La3Zr0.5Ga5Si0.5O14 single crystals with the Ca3Ga2Ge4O14 structure is performed (sp. gr. P321, a = 8.226(1) Å, c = 5.1374(6) Å, Z = 1, Mo K α 1 radiation, 1920 crystallographically independent reflections, R = 0.0166, R w = 0.0192). The absolute structure is determined. It is shown that possible transition of some of La atoms (∼1.2%) from the 3e to 6g position may give rise to the formation of structural defects.

Journal

Crystallography Reports – Springer Journals

Published: Jan 1, 2004

Keywords: Crystallography and Scattering Methods

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