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Galvanomagnetic Properties in Anisotropic Layered Films Based on Bismuth Chalcogenides

Galvanomagnetic Properties in Anisotropic Layered Films Based on Bismuth Chalcogenides —In anisotropic layered films of a multicomponent n-Bi1.92In0.02Te2.85Se0.15 solid solution in strong magnetic fields from 2 to 14 T at low temperatures, quantum oscillations of the magnetoresistance associated with the surface states of electrons in three-dimensional topological insulators are studied. From analysis of the spectral distribution of the amplitudes of quantum magnetoresistance oscillations, the main parameters of the Dirac-fermion surface states are determined. The results are compared with data obtained by the method of scanning tunneling spectroscopy. It is shown that a high surface concentration determines the contribution of the Dirac-fermion surface states to the thermoelectric properties of n-Bi1.92In0.02Te2.85Se0.15 films. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Semiconductors Springer Journals

Galvanomagnetic Properties in Anisotropic Layered Films Based on Bismuth Chalcogenides

Semiconductors , Volume 56 (2) – Feb 1, 2022

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References (22)

Publisher
Springer Journals
Copyright
Copyright © Pleiades Publishing, Ltd. 2022. ISSN 1063-7826, Semiconductors, 2022, Vol. 56, No. 2, pp. 134–138. © Pleiades Publishing, Ltd., 2022. ISSN 1063-7826, Semiconductors, 2022. © Pleiades Publishing, Ltd., 2022. Russian Text © The Author(s), 2021, published in Fizika i Tekhnika Poluprovodnikov, 2021, Vol. 55, No. 12, pp. 1119–1123.
ISSN
1063-7826
eISSN
1090-6479
DOI
10.1134/s1063782622010183
Publisher site
See Article on Publisher Site

Abstract

—In anisotropic layered films of a multicomponent n-Bi1.92In0.02Te2.85Se0.15 solid solution in strong magnetic fields from 2 to 14 T at low temperatures, quantum oscillations of the magnetoresistance associated with the surface states of electrons in three-dimensional topological insulators are studied. From analysis of the spectral distribution of the amplitudes of quantum magnetoresistance oscillations, the main parameters of the Dirac-fermion surface states are determined. The results are compared with data obtained by the method of scanning tunneling spectroscopy. It is shown that a high surface concentration determines the contribution of the Dirac-fermion surface states to the thermoelectric properties of n-Bi1.92In0.02Te2.85Se0.15 films.

Journal

SemiconductorsSpringer Journals

Published: Feb 1, 2022

Keywords: bismuth telluride; films; solid solutions; topological insulator; magnetoresistance oscillations

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