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References (39)
-
M. Abbott, P. Cousins, F. Chen, J. Cotter (2005)
Laser-induced defects in crystalline silicon solar cellsConference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.
-
Lihui Song, A. Wenham, Sisi Wang, P. Hamer, M. Ahmmed, B. Hallam, L. Mai, M. Abbott, E. Hawkes, C. Chong, S. Wenham (2015)
Laser Enhanced Hydrogen Passivation of Silicon WafersInternational Journal of Photoenergy, 2015
-
and Hanoka, R. Bell (1981)
Electron-Beam-Induced Currents in SemiconductorsAnnual Review of Materials Science, 11
-
X Deng B L Sopori (1994)
Hydrogen in silicon: a discussion of diffusion and passivation mechanismsIEEE 1st World Conference on Photovoltaic Energy, 2
-
J. Benton, C. Doherty, S. Ferris, D. Flamm, L. Kimerling, H. Leamy (1980)
Hydrogen passivation of point defects in siliconApplied Physics Letters, 36
-
K. Weronek, J. Weber, H. Queisser (1993)
Hydrogen Passivation of the Dislocation-Related D-Band Luminescence in Silicon†Physica Status Solidi (a), 137
-
(2015)
Efficiency enhancement for screen printed solar cells on Quasi-Mono wafers through advanced hydrogenation -
B. Hallam, B. Tjahjono, T. Trupke, S. Wenham (2014)
Photoluminescence imaging for determining the spatially resolved implied open circuit voltage of silicon solar cellsJournal of Applied Physics, 115
-
O. Breitenstein, J. Rakotoniaina, M. Rifai, M. Werner (2004)
Shunt types in crystalline silicon solar cellsProgress in Photovoltaics: Research and Applications, 12
-
M. Hilali, S. Sridharan, C. Khadilkar, A. Shaikh, A. Rohatgi, Steve Kim (2006)
Effect of glass frit chemistry on the physical and electrical properties of thick-film Ag contacts for silicon solar cellsJournal of Electronic Materials, 35
-
X. Gu, Xuegong Yu, K. Guo, L. Chen, D. Wang, Deren Yang (2012)
Seed-assisted cast quasi-single crystalline silicon for photovoltaic application: Towards high efficiency and low cost silicon solar cellsSolar Energy Materials and Solar Cells, 101
-
B. Sopori, Yi Zhang, N. Ravindra (2001)
Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic propertiesJournal of Electronic Materials, 30
-
Kei-Hsiung Yang, G. Schwuttke, T. Ciszek (1980)
Structural and electrical charaterization of crystallographic defects in silicon ribbonsJournal of Crystal Growth, 50
-
B. Sopori, X. Deng, J. Benner, A. Rohatgi, P. Sana, S. Estreicher, Y. Park, M. Roberson (1996)
Hydrogen in silicon: a discussion of diffusion and passivation mechanisms.Solar Energy Materials and Solar Cells
-
T. Sadoh, K. Tsukamoto, A. Baba, Dong-Ju Bai, A. Kenjo, T. Tsurushima, H. Mori, H. Nakashima (1997)
DEEP LEVEL OF IRON-HYDROGEN COMPLEX IN SILICONJournal of Applied Physics, 82
-
Chang, Chadi (1989)
Hydrogen bonding and diffusion in crystalline silicon.Physical review. B, Condensed matter, 40 17
-
I. Takahashi, N. Usami, K. Kutsukake, G. Stokkan, K. Morishita, K. Nakajima (2010)
Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seedJournal of Crystal Growth, 312
-
G. Cheek, R. Mertens, R. Overstraeten, L. Frisson (1984)
Thick-film metallization for solar cell applicationsIEEE Transactions on Electron Devices, 31
-
B. Hallam, P. Hamer, S. Wenham, M. Abbott, A. Sugianto, A. Wenham, C. Chan, Guangqi Xu, J. Kraiem, J. Degoulange, R. Einhaus (2014)
Advanced Bulk Defect Passivation for Silicon Solar CellsIEEE Journal of Photovoltaics, 4
-
M. Sheoran, A. Upadhyaya, A. Rohatgi (2008)
Bulk lifetime and efficiency enhancement due to gettering and hydrogenation of defects during cast multicrystalline silicon solar cell fabricationSolid-state Electronics, 52
-
B. Hallam, A. Sugianto, L. Mai, Guangqi Xu, C. Chan, M. Abbott, S. Wenham, A. Urueña, M. Aleman, J. Poortmans (2014)
Hydrogen passivation of laser-induced defects for silicon solar cells2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
-
B. Sopori (2002)
Silicon solar-cell processing for minimizing the influence of impurities and defectsJournal of Electronic Materials, 31
-
A. Wenham, Lihui Song, M. Abbott, Iskra Zafirovska, Sisi Wang, B. Hallam, C. Chan, A. Barnett, S. Wenham (2017)
Defect passivation on cast-mono crystalline screen-printed cellsFrontiers in Energy, 11
-
Van Cg, Y. Bar-Yam, S. Pantelides (1988)
Theory of hydrogen diffusion and reactions in crystalline silicon.Physical review letters, 60 26
-
A. Lennon, Yu Yao, S. Wenham (2013)
Evolution of metal plating for silicon solar cell metallisationProgress in Photovoltaics: Research and Applications, 21
-
P J H Denteneer C G Walle (1989)
Theory of hydrogen diffusion and reactions in crystalline siliconPhysical Review B: Condensed Matter and Materials Physics, 39
-
P. Fedders (2002)
Diffusion of hydrogen in different charge states in realistic models ofa-Si:HPhysical Review B, 66
-
P. Hamer, B. Hallam, S. Wenham, M. Abbott (2014)
Manipulation of Hydrogen Charge States for Passivation of P-Type Wafers in PhotovoltaicsIEEE Journal of Photovoltaics, 4
-
C. Herring, N. Johnson, C. Walle (2001)
Energy levels of isolated interstitial hydrogen in siliconPhysical Review B, 64
-
J. Haunschild, M. Glatthaar, M. Demant, Jan Nievendick, Markus Motzko, S. Rein, E. Weber (2010)
Quality control of as-cut multicrystalline silicon wafers using photoluminescence imaging for solar cell productionSolar Energy Materials and Solar Cells, 94
-
J I Hanoka C Dubé (1984)
Hydrogen passivation of dislocations in siliconApplied Physics Letters, 45
-
Svenja Wilking, C. Beckh, S. Ebert, A. Herguth, G. Hahn (2014)
Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processesSolar Energy Materials and Solar Cells, 131
-
W. Divigalpitiya, S. Morrison, G. Vercruysse, A. Praet, W. Gomes (1987)
Hydrogen passivation of dislocations in siliconSolar Energy Materials, 15
-
S. Martinuzzi, I. Périchaud, F. Warchol (2003)
Hydrogen passivation of defects in multicrystalline silicon solar cellsSolar Energy Materials and Solar Cells, 80
-
J. Alamo, J. Eguren, A. Luque (1981)
Operating limits of Al-alloyed high-low junctions for BSF solar cellsSolid-state Electronics, 24
-
K. Nakayashiki, A. Rohatgi, S. Ostapenko, I. Tarasov (2005)
Minority-carrier lifetime enhancement in edge-defined film-fed grown Si through rapid thermal processing-assisted reduction of hydrogen-defect dissociationJournal of Applied Physics, 97
-
Johnson, Herring (1988)
Hydrogen immobilization in silicon p-n junctions.Physical review. B, Condensed matter, 38 2
-
J. Tan, A. Cuevas, D. Macdonald, T. Trupke, R. Bardos, K. Roth (2008)
On the electronic improvement of multi‐crystalline silicon via gettering and hydrogenationProgress in Photovoltaics: Research and Applications, 16
-
S. Narasimha, A. Rohatgi, A. Weeber (1999)
An optimized rapid aluminum back surface field technique for silicon solar cellsIEEE Transactions on Electron Devices, 46
- Publisher
- Springer Journals
- Copyright
- 2017 Higher Education Press and Springer-Verlag Berlin Heidelberg
- ISSN
- 2095-1701
- eISSN
- 2095-1698
- DOI
- 10.1007/s11708-016-0443-5
- Publisher site
- See Article on Publisher Site
Abstract
Abstract Cast-mono crystalline silicon wafers contain crystallographic defects, which can severely impact the electrical performance of solar cells. This paper demonstrates that applying hydrogenation processes at moderate temperatures to finished screen print cells can passivate dislocation clusters within the cast-mono crystalline silicon wafers far better than the hydrogenation received during standard commercial firing conditions. Efficiency enhancements of up to 2% absolute are demonstrated on wafers with high dislocation densities. The impact of illumination to manipulate the charge state of hydrogen during annealing is investigated and found to not be significant on the wafers used in this study. This finding is contrary to a previous study on similar wafers that concluded increased H– or H0 from laser illumination was responsible for the further passivation of positively charged dangling bonds within the dislocation clusters.
Journal
"Frontiers in Energy" – Springer Journals
Published: Mar 1, 2017