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I.N. Odin (1996)
Physicochemical Analysis of Ternary and Mutual Ternary Systems Containing Cadmium, Zinc, Silicon, and Bismuth Chalcogenides and the Properties of Materials in These SystemsZh. Neorg. Khim., 41
V.I. Gavrilenko, A.M. Grekhov, D.V. Korbutyak (1987)
Opticheskie svoistva poluprovodnikov
I.N. Odin, M.V. Chukichev, E.A. Galiulin (1999)
Preparation and Luminescent Properties of CdX〈Ge〉 ?and CdX〈Sn〉 ?(X=S, Se) CrystalsNeorg. Mater., 35
I. Odin, M. Chukichev, E. Galiulin (1999)
Preparation and luminescent properties of CdX and CdX (X = S, Se) crystalsInorganic Materials, 35
I. Odin (1996)
Ternary reciprocal ternary systems containing cadmium, zinc, silicon, and bismuth: Physicochemical analysis and characterization of alloysZhurnal Neorganicheskoi Khimii, 41
N.A. Vlasenko, N.I. Vitrikhovskii, Z.L. Denisova (1966)
On the Nature of Emission Centers in Pure Cadmium SulfideIzv. Akad. Nauk SSSR, Ser. Fiz., 30
I.N. Odin, V.A. Ivanov (1991)
Phase Equilibria in the Cd-Si-Se System and Properties of Cd4SiSe6Zh. Neorg. Khim., 35
A. Wachtel (1961)
ZnS : Cu , Si PhosphorsJournal of The Electrochemical Society, 108
I.N. Odin, V.A. Ivanov (1991)
Liquidus Surface in the Cd-Si-Te SystemZh. Neorg. Khim., 35
CdS, CdSe, and CdTe single crystals were vapor-phase-doped with the corresponding silicon chalcogenides under nearly equilibrium conditions. Cathodoluminescence studies revealed that the Si dopant produced new luminescence centers in the crystals. The cathodoluminescence spectra of Cd4SiS6and Cd4SiSe6crystals were measured. Metastable, sphalerite CdS〈Si〉 and CdSe〈Si〉 films were grown under highly nonequilibrium conditions. The maximum of edge emission in their spectra was redshifted as compared to the stable materials. The CdS〈Si〉 and CdSe〈Si〉 crystals were shown to be photosensitive.
Inorganic Materials – Springer Journals
Published: Oct 8, 2004
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