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A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction

A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction Spin-valve structures used in modern hard-drive read heads and magnetic random access memories comprise two ferromagnetic electrodes. It is now shown that antiferromagnets can be used as electrodes in spin valves. The results open a wide range of new possibilities for the choice of materials for spintronics devices. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Nature Materials Springer Journals

A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction

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References (21)

Publisher
Springer Journals
Copyright
Copyright © 2011 by Nature Publishing Group
Subject
Materials Science; Materials Science, general; Optical and Electronic Materials; Biomaterials; Nanotechnology; Condensed Matter Physics
ISSN
1476-1122
eISSN
1476-4660
DOI
10.1038/nmat2983
Publisher site
See Article on Publisher Site

Abstract

Spin-valve structures used in modern hard-drive read heads and magnetic random access memories comprise two ferromagnetic electrodes. It is now shown that antiferromagnets can be used as electrodes in spin valves. The results open a wide range of new possibilities for the choice of materials for spintronics devices.

Journal

Nature MaterialsSpringer Journals

Published: Mar 13, 2011

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