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A Decisive Role of Si and Ge Energy Levels in the Process of Pore Formation during Electrochemical Etching in Hydrofluoric Acid Solutions

A Decisive Role of Si and Ge Energy Levels in the Process of Pore Formation during... It has been shown that the difference in the structure of electronic orbitals of silicon and germanium atoms is a decisive factor responsible for the formation of porous layers during their electrochemical etching in solutions of hydrofluoric acid. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Doklady Chemistry Springer Journals

A Decisive Role of Si and Ge Energy Levels in the Process of Pore Formation during Electrochemical Etching in Hydrofluoric Acid Solutions

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References (6)

Publisher
Springer Journals
Copyright
Copyright © Pleiades Publishing, Ltd. 2020. ISSN 0012-5008, Doklady Chemistry, 2020, Vol. 495, Part 1, pp. 178–181. © Pleiades Publishing, Ltd., 2020. Russian Text © The Author(s), 2020, published in Doklady Rossiiskoi Akademii Nauk. Khimiya, Nauki o Materialakh, 2020, Vol. 495, pp. 12–15.
ISSN
0012-5008
eISSN
1608-3113
DOI
10.1134/S001250082011004X
Publisher site
See Article on Publisher Site

Abstract

It has been shown that the difference in the structure of electronic orbitals of silicon and germanium atoms is a decisive factor responsible for the formation of porous layers during their electrochemical etching in solutions of hydrofluoric acid.

Journal

Doklady ChemistrySpringer Journals

Published: Feb 13, 2021

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