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Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices

Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic... Abstract.Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ∼1  eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14  mA/cm2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (VOC) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5  mA/cm2, we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1  sun=100  mW/cm2), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5  mA/cm2 in all four subcells. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Photonics for Energy SPIE

Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices

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References (26)

Publisher
SPIE
ISSN
1947-7988
eISSN
1947-7988
DOI
10.1117/1.JPE.7.022502
Publisher site
See Article on Publisher Site

Abstract

Abstract.Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ∼1  eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14  mA/cm2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (VOC) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5  mA/cm2, we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1  sun=100  mW/cm2), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5  mA/cm2 in all four subcells.

Journal

Journal of Photonics for Energy – SPIE

Published: Apr 1, 2017

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