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- Copyright
- Copyright © 2016 IOP Publishing Ltd
- eISSN
- 2053-1583
- DOI
- 10.1088/2053-1583/3/3/031001
- Publisher site
- See Article on Publisher Site
Abstract
We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induced during fabrication of BP channel material for quantum transport nanodevices. Highly stable BP nanodevices with ultrahigh mobility and controllable types are realized through depositing appropriate metal electrodes after conducting a selective etching to the BP encapsulation structure. Chromium and titanium are suitable metal electrodes for BP channels to control the transition from a p-type unipolar property to ambipolar characteristic because of different work functions. Record-high mobilities of 6000 cm2 V−1 s−1 and 8400 cm2 V−1 s−1 are respectively obtained for electrons and holes at cryogenic temperatures. High-mobility BP devices enable the investigation of quantum oscillations with an indistinguishable Zeeman effect in laboratory magnetic field.
Journal
2D Materials – IOP Publishing
Published: Sep 1, 2016