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Two-inch high-quality (001) diamond heteroepitaxial growth on sapphire (112̄0) misoriented substrate by step-flow mode

Two-inch high-quality (001) diamond heteroepitaxial growth on sapphire (112̄0) misoriented... Two-inch-diameter high-quality free-standing (001) diamond layers were grown on misoriented (112¯0) sapphire. The substrate misorientation allows step-flow growth, and tensile stress is released in the diamond layer. Consequently, the diamond layer delaminates naturally from the substrate without cracking. For the diamond grown on the sapphire misoriented by 7° toward the [11¯00] direction, the widths of the (004) and (311) X-ray rocking curves were 98.35 and 175.3 arcsec, respectively, the lowest ever reported. The curvature radius of the diamond was 99.64 cm in the [11¯00] direction and 260.21 cm in the [0001] direction of the substrate, the highest ever reported. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Physics Express IOP Publishing

Two-inch high-quality (001) diamond heteroepitaxial growth on sapphire (112̄0) misoriented substrate by step-flow mode

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References (31)

Publisher
IOP Publishing
Copyright
© 2021 The Japan Society of Applied Physics
ISSN
1882-0778
eISSN
1882-0786
DOI
10.35848/1882-0786/ac28e7
Publisher site
See Article on Publisher Site

Abstract

Two-inch-diameter high-quality free-standing (001) diamond layers were grown on misoriented (112¯0) sapphire. The substrate misorientation allows step-flow growth, and tensile stress is released in the diamond layer. Consequently, the diamond layer delaminates naturally from the substrate without cracking. For the diamond grown on the sapphire misoriented by 7° toward the [11¯00] direction, the widths of the (004) and (311) X-ray rocking curves were 98.35 and 175.3 arcsec, respectively, the lowest ever reported. The curvature radius of the diamond was 99.64 cm in the [11¯00] direction and 260.21 cm in the [0001] direction of the substrate, the highest ever reported.

Journal

Applied Physics ExpressIOP Publishing

Published: Nov 1, 2021

Keywords: diamond; step-flow growth; heteroepitaxial growth

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