Access the full text.
Sign up today, get DeepDyve free for 14 days.
H. Terrones, H. Terrones, E. Corro, S. Feng, J. Poumirol, D. Rhodes, D. Smirnov, N. Pradhan, Zhong Lin, Minh Nguyen, A. Elías, T. Mallouk, L. Balicas, M. Pimenta, M. Terrones (2014)
New First Order Raman-active Modes in Few Layered Transition Metal DichalcogenidesScientific Reports, 4
A. Abderrahmane, P. Ko, Tran Thu, Shunji Ishizawa, T. Takamura, Adarsh Sandhu (2014)
High photosensitivity few-layered MoSe2 back-gated field-effect phototransistorsNanotechnology, 25
A. Splendiani, Liangyan Sun, Yuanbo Zhang, Tianshu Li, Jonghwan Kim, C. Chim, G. Galli, Feng Wang (2010)
Emerging photoluminescence in monolayer MoS2.Nano letters, 10 4
R. Ulaganathan, Yi-Ying Lu, Chia-Jung Kuo, S. Tamalampudi, R. Sankar, K. Boopathi, Ankur Anand, Kanchan Yadav, R. Mathew, Chia-Rung Liu, F. Chou, Yit‐Tsong Chen (2016)
High photosensitivity and broad spectral response of multi-layered germanium sulfide transistors.Nanoscale, 8 4
Chulseung Jung, Seung Kim, Hyunseong Moon, Gyuchull Han, Junyeon Kwon, Y. Hong, I. Omkaram, Y. Yoon, Sunkook Kim, Jozeph Park (2015)
Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast PhotodetectorScientific Reports, 5
N. Pradhan, A. McCreary, D. Rhodes, Zhengguang Lu, S. Feng, E. Manousakis, D. Smirnov, R. Namburu, M. Dubey, A. Walker, H. Terrones, M. Terrones, V. Dobrosavljević, L. Balicas (2015)
Metal to Insulator Quantum-Phase Transition in Few-Layered ReS₂.Nano letters, 15 12
(2012)
SunY, LuG, ZhangQ, ChenX andZhangH2012 Single layerMoS2 phototransistors ACSNano
G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, P. Arquer, F. Gatti, F. Koppens (2011)
Hybrid graphene-quantum dot phototransistors with ultrahigh gain.Nature nanotechnology, 7 6
J. Wang, Yafang Yang, Yu-An Chen, Kenji Watanabe, T. Taniguchi, H. Churchill, P. Jarillo-Herrero (2015)
Electronic transport of encapsulated graphene and WSe2 devices fabricated by pick-up of prepatterned hBN.Nano letters, 15 3
Nengjie Huo, Shengxue Yang, Zhongming Wei, Shu-Shen Li, J. Xia, Jingbo Li (2014)
Photoresponsive and Gas Sensing Field-Effect Transistors based on Multilayer WS2 NanoflakesScientific Reports, 4
B. Baugher, H. Churchill, Yafang Yang, P. Jarillo-Herrero (2013)
Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2.Nano letters, 13 9
N. Pradhan, D. Rhodes, Q. Zhang, S. Talapatra, M. Terrones, P. Ajayan, L. Balicas (2013)
Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2Applied Physics Letters, 102
Xiaoze Liu, T. Galfsky, Zheng Sun, F. Xia, Erh-chen Lin, Yi‐Hsien Lee, St'ephane K'ena-Cohen, V. Menon (2014)
Strong light–matter coupling in two-dimensional atomic crystalsNature Photonics, 9
Oriol Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenović, A. Kis (2013)
Ultrasensitive photodetectors based on monolayer MoS2.Nature nanotechnology, 8 7
X. Li, J. Carey, J. Sickler, M. Pralle, C. Palsule, C. Vineis (2012)
Silicon photodiodes with high photoconductive gain at room temperature.Optics express, 20 5
G. Su, V. Hadjiev, Phillip Loya, Jing Zhang, Sidong Lei, S. Maharjan, Pei Dong, Pulickel Ajayan, J. Lou, Haibing Peng (2015)
Chemical vapor deposition of thin crystals of layered semiconductor SnS2 for fast photodetection application.Nano letters, 15 1
A. Neto, et al. (2013)
Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films.ChemInform, 44
Woong Choi, M. Cho, A. Konar, Jong Lee, G. Cha, S. Hong, Sangsig Kim, Jeongyong Kim, D. Jena, J. Joo, Sunkook Kim (2012)
High‐Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to InfraredAdvanced Materials, 24
H. Lee, S. Min, Youn-Gyung Chang, Min Park, Taewook Nam, Hyungjun Kim, J. Kim, S. Ryu, S. Im (2012)
MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap.Nano letters, 12 7
Jinsu Pak, Jingon Jang, Kyungjun Cho, Taeyoung Kim, Jae‐Keun Kim, Younggul Song, Woong-Ki Hong, Misook Min, Hyoyoung Lee, Takhee Lee (2015)
Enhancement of photodetection characteristics of MoS2 field effect transistors using surface treatment with copper phthalocyanine.Nanoscale, 7 44
N. Pradhan, J. Ludwig, Zhengguang Lu, D. Rhodes, Michael Bishop, K. Thirunavukkuarasu, S. McGill, D. Smirnov, L. Balicas (2015)
High Photoresponsivity and Short Photoresponse Times in Few-Layered WSe2 Transistors.ACS applied materials & interfaces, 7 22
D. Kang, Jaewoo Shim, S. Jang, Jeaho Jeon, M. Jeon, G. Yeom, W. Jung, Y. Jang, Sungjoo Lee, Jin-Hong Park (2015)
Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane.ACS nano, 9 2
Rui Cheng, Dehui Li, Hailong Zhou, Chen Wang, Anxiang Yin, Shanjuan Jiang, Yuan Liu, Yu Chen, Yu Huang, X. Duan (2014)
Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p–n DiodesNano Letters, 14
Sukrit Sucharitakul, N. Goble, U. Kumar, R. Sankar, Z. Bogorad, F. Chou, Yit‐Tsong Chen, Xuan Gao (2015)
Intrinsic Electron Mobility Exceeding 10³ cm²/(V s) in Multilayer InSe FETs.Nano letters, 15 6
L. Britnell, R. Ribeiro, A. Eckmann, R. Jalil, B. Belle, A. Mishchenko, Y.J. Kim, R. Gorbachev, T. Georgiou, S. Morozov, A. Grigorenko, SUPARNA DUTTASINHA, C. Casiraghi, A. Neto, K. Novoselov (2013)
Strong Light-Matter Interactions in Heterostructures of Atomically Thin FilmsScience, 340
S. Tamalampudi, Yi-Ying Lu, Rajesh U, R. Sankar, C. Liao, Karukanara B, Che-Hsuan Cheng, F. Chou, Yit‐Tsong Chen (2014)
High performance and bendable few-layered InSe photodetectors with broad spectral response.Nano letters, 14 5
N. Pradhan, D. Rhodes, S. Memaran, J. Poumirol, D. Smirnov, S. Talapatra, S. Feng, N. Peréa-López, A. Elías, M. Terrones, P. Ajayan, L. Balicas (2015)
Hall and field-effect mobilities in few layered p-WSe2 field-effect transistorsScientific Reports, 5
Z. Yin, Hai Li, Hong Li, Lin Jiang, Yumeng Shi, Yinghui Sun, Gang Lu, Qing Zhang, Xiaodong Chen, Hua Zhang (2012)
Single-layer MoS2 phototransistors.ACS nano, 6 1
Jiadan Lin, Cheng Han, Fei Wang, Rui Wang, Du Xiang, S. Qin, Xue-Ao Zhang, Li Wang, Hua Zhang, A. Wee, Wei Chen (2014)
Electron-doping-enhanced trion formation in monolayer molybdenum disulfide functionalized with cesium carbonate.ACS nano, 8 5
Wenjing Zhang, Ming-Hui Chiu, Chang-Hsiao Chen, Wei Chen, Lain‐Jong Li, A. Wee (2014)
Role of metal contacts in high-performance phototransistors based on WSe2 monolayers.ACS nano, 8 8
D. Kufer, G. Konstantatos (2015)
Highly Sensitive, Encapsulated MoS2 Photodetector with Gate Controllable Gain and Speed.Nano letters, 15 11
K. Mak, Changgu Lee, J. Hone, J. Shan, T. Heinz (2010)
Atomically thin MoS₂: a new direct-gap semiconductor.Physical review letters, 105 13
N. Peréa-López, Zhong Lin, N. Pradhan, A. Iniguez-Rabago, Ana Elias, A. McCreary, J. Lou, P. Ajayan, H. Terrones, L. Balicas, M. Terrones (2014)
CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage2D Materials, 1
Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) have been extensively studied because of their strong light–matter interaction and the remarkable optoelectronic response of their field-effect transistors (FETs). Here, we report a photoconductivity study from FETs built from few-layers of p-WSe2 measured in a multi-terminal configuration under illumination by a 532 nm laser source. The photogenerated current was measured as a function of the incident optical power, of the drain-to-source bias and of the gate voltage. We observe a considerably larger photoconductivity when the phototransistors were measured via a four-terminal configuration when compared to a two-terminal one. For an incident laser power of 248 nW, we extract 18 A W−1 and ∼4000% for the two-terminal responsivity (R) and the concomitant external quantum efficiency (EQE) respectively, when a bias voltage Vds = 1 V and a gate voltage Vbg = 10 V are applied to the sample. R and EQE are observed to increase by 370% to ∼85 A W−1 and ∼20 000% respectively, when using a four-terminal configuration. Thus, we conclude that previous reports have severely underestimated the optoelectronic response of transition metal dichalcogenides, which in fact reveals a remarkable potential for photosensing applications.
2D Materials – IOP Publishing
Published: Dec 1, 2016
Read and print from thousands of top scholarly journals.
Already have an account? Log in
Bookmark this article. You can see your Bookmarks on your DeepDyve Library.
To save an article, log in first, or sign up for a DeepDyve account if you don’t already have one.
Copy and paste the desired citation format or use the link below to download a file formatted for EndNote
Access the full text.
Sign up today, get DeepDyve free for 14 days.
All DeepDyve websites use cookies to improve your online experience. They were placed on your computer when you launched this website. You can change your cookie settings through your browser.