Access the full text.
Sign up today, get DeepDyve free for 14 days.
Wan-Chao Li, Lin Xue, H. Abruña, D. Ralph (2014)
Magnetic tunnel junctions with single-layer-graphene tunnel barriersPhysical Review B, 89
Jing-Jing Chen, Jie Meng, Yangbo Zhou, Han-Chun Wu, Ya‐Qing Bie, Z. Liao, D. Yu (2013)
Layer-by-layer assembly of vertically conducting graphene devicesNature Communications, 4
M. Kamalakar, André Dankert, J. Bergsten, T. Ive, S. Dash (2014)
Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron NitrideScientific Reports, 4
Marie‐Blandine Martin, B. Dlubak, R. Weatherup, Heejun Yang, C. Deranlot, K. Bouzehouane, F. Petroff, A. Anane, S. Hofmann, J. Robertson, A. Fert, P. Sénéor (2014)
Sub-nanometer Atomic Layer Deposition for Spintronics in Magnetic Tunnel Junctions Based on Graphene Spin-Filtering MembranesACS Nano, 8
Hongxin Yang, A. Hallal, D. Terrade, X. Waintal, Stephan Roche, M. Chshiev (2013)
Proximity effects induced in graphene by magnetic insulators: first-principles calculations on spin filtering and exchange-splitting gaps.Physical review letters, 110 4
Seyoung Kim, J. Nah, I. Jo, D. Shahrjerdi, L. Colombo, Z. Yao, E. Tutuc, S. Banerjee (2009)
Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectricApplied Physics Letters, 94
P. San-Jose, R. Gorbachev, SUPARNA DUTTASINHA, K. Novoselov, F. Guinea (2013)
Stacking boundaries and transport in bilayer graphene.Nano letters, 14 4
C. Woods, F. Withers, M. Zhu, Y. Cao, G. Yu, A. Kozikov, M. Shalom, S. Morozov, M. Wijk, A. Fasolino, M. Katsnelson, K. Watanabe, T. Taniguchi, SUPARNA DUTTASINHA, A. Mishchenko, K. Novoselov (2016)
Macroscopic self-reorientation of interacting two-dimensional crystalsNature Communications, 7
C. Shang, J. Nowak, R. Jansen, J. Moodera (1998)
Temperature dependence of magnetoresistance and surface magnetization in ferromagnetic tunnel junctionsPhysical Review B, 58
M. Schaffer, B. Schaffer, Q. Ramasse (2012)
Sample preparation for atomic-resolution STEM at low voltages by FIB.Ultramicroscopy, 114
R. Nouchi, Tatsuya Saito, K. Tanigaki (2011)
Determination of Carrier Type Doped from Metal Contacts to Graphene by Channel-Length-Dependent Shift of Charge Neutrality PointsApplied Physics Express, 4
P. Lazic, K. Belashchenko, I. Žutić (2016)
Effective gating and tunable magnetic proximity effects in two-dimensional heterostructuresPhysical Review B, 93
O. Yazyev, A. Pasquarello (2009)
Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitridePhysical Review B, 80
P. Wong, M. Jong, L. Leonardus, M. Siekman, W. Wiel (2011)
Growth mechanism and interface magnetic properties of Co nanostructures on graphitePhysical Review B, 84
R. Jansen, J. Moodera (2000)
Magnetoresistance in doped magnetic tunnel junctions: Effect of spin scattering and impurity-assisted transportPhysical Review B, 61
A. Kretinin, Y. Cao, J. Tu, G. Yu, R. Jalil, K. Novoselov, S. Haigh, A. Gholinia, A. Mishchenko, M. Lozada, T. Georgiou, C. Woods, F. Withers, P. Blake, G. Eda, A. Wirsig, C. Hucho, K. Watanabe, T. Taniguchi, SUPARNA DUTTASINHA, R. Gorbachev (2014)
Electronic properties of graphene encapsulated with different two-dimensional atomic crystals.Nano letters, 14 6
J. Bunch, S. Verbridge, J. Alden, A. Zande, J. Parpia, H. Craighead, P. McEuen (2008)
Impermeable atomic membranes from graphene sheets.Nano letters, 8 8
Jie Meng, Jing-Jing Chen, Yuan Yan, D. Yu, Z. Liao (2013)
Vertical graphene spin valve with Ohmic contacts.Nanoscale, 5 19
L. Britnell, R. Gorbachev, R. Jalil, B. Belle, F. Schedin, A. Mishchenko, T. Georgiou, M. Katsnelson, L. Eaves, S. Morozov, N. Peres, J. Leist, SUPARNA DUTTASINHA, K. Novoselov, L. Ponomarenko (2011)
Field-Effect Tunneling Transistor Based on Vertical Graphene HeterostructuresScience, 335
Eduardo Lee, K. Balasubramanian, R. Weitz, M. Burghard, K. Kern (2008)
Contact and edge effects in graphene devices.Nature nanotechnology, 3 8
S. Koenig, Narasimha Boddeti, M. Dunn, J. Bunch (2011)
Ultrastrong adhesion of graphene membranes.Nature nanotechnology, 6 9
E. Tsymbal, O. Mryasov, P. Leclair (2003)
Spin-dependent tunnelling in magnetic tunnel junctionsJournal of Physics: Condensed Matter, 15
F. Withers, O. Pozo-Zamudio, A. Mishchenko, A. Rooney, A. Gholinia, Kenji Watanabe, T. Taniguchi, S. Haigh, SUPARNA DUTTASINHA, A. Tartakovskii, K. Novoselov (2014)
Light-emitting diodes by band-structure engineering in van der Waals heterostructures.Nature materials, 14 3
P. Khomyakov, G. Giovannetti, G. Brocks, V. Karpan, J. Brink, P. Kelly (2008)
Doping graphene with metal contacts.Physical review letters, 101 2
P. Gargiani, R. Cuadrado, H. Vasili, M. Pruneda, M. Valvidares (2016)
Graphene-based synthetic antiferromagnets and ferrimagnetsNature Communications, 8
G. Kästle, H. Boyen, A. Schröder, A. Plettl, P. Ziemann (2004)
Size effect of the resistivity of thin epitaxial gold filmsPhysical Review B, 70
M. Piquemal-Banci, R. Galceran, S. Caneva, Marie‐Blandine Martin, R. Weatherup, P. Kidambi, K. Bouzehouane, S. Xavier, A. Anane, F. Petroff, A. Fert, J. Robertson, S. Hofmann, B. Dlubak, P. Sénéor (2016)
Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriersApplied Physics Letters, 108
SUPARNA DUTTASINHA, I. Grigorieva (2013)
Van der Waals heterostructuresNature, 499
M. Jergel, I. Cheshko, Y. Halahovets, P. Šiffalovič, I. Matko, R. Senderák, S. Protsenko, E. Majková, S. Luby (2009)
Annealing behaviour of structural and magnetic properties of evaporated Co thin filmsJournal of Physics D: Applied Physics, 42
D. Pacil'e, P. Leicht, M. Papagno, P. Sheverdyaeva, P. Moras, C. Carbone, K. Krausert, L. Zielke, M. Fonin, Y. Dedkov, F. Mittendorfer, J. Doppler, A. Garhofer, J. Redinger (2013)
Artificially lattice-mismatched graphene/metal interface: Graphene/Ni/Ir(111)Physical Review B, 87
Zhiyong Wang, Chi Tang, R. Sachs, Y. Barlas, Jing Shi (2014)
Proximity-induced ferromagnetism in graphene revealed by the anomalous Hall effect.Physical review letters, 114 1
J. Leutenantsmeyer, A. Kaverzin, M. Wojtaszek, B. Wees (2016)
Supplementary information for ’ Proximity induced room-temperature ferromagnetism in graphene probed with spin currents ’
V. Karpan, P. Khomyakov, A. Starikov, G. Giovannetti, G. Giovannetti, M. Zwierzycki, M. Talanana, G. Brocks, J. Brink, J. Brink, P. Kelly (2008)
Theoretical prediction of perfect spin filtering at interfaces between close-packed surfaces of Ni or Co and graphite or graphenePhysical Review B, 78
L. Britnell, R. Gorbachev, R. Jalil, B. Belle, Fredrik Schedin, Mikhail, I. Katsnelson, Laurence Eaves, S. Morozov, A. Mayorov, R. NunoM., Peres, Antonio Neto, Jon Leist, A. Geim, L. Ponomarenko, K. Novoselov (2012)
Atomically thin boron nitride : a tunnelling barrier for graphene devices
W. Auwärter, M. Muntwiler, T. Greber, J. Osterwalder (2002)
Co on h-BN/Ni(111): from island to island-chain formation and Co intercalationSurface Science, 511
W. Han, R. Kawakami, M. Gmitra, J. Fabian (2015)
Graphene spintronics.Nature nanotechnology, 9 10
P. Leclair, J. Kohlhepp, C. Vin, H. Wieldraaijer, H. Swagten, W. Jonge, A. Davis, J. Maclaren, J. Moodera, R. Jansen (2001)
Band structure and density of States effects in co-based magnetic tunnel junctions.Physical review letters, 88 10
M. Iqbal, M. Iqbal, Jae Lee, Yong Kim, S. Chun, J. Eom (2013)
Spin valve effect of NiFe/graphene/NiFe junctionsNano Research, 6
D. Tomus, H. Ng (2013)
In situ lift-out dedicated techniques using FIB-SEM system for TEM specimen preparation.Micron, 44
H. Michaelson (1977)
The work function of the elements and its periodicityJournal of Applied Physics, 48
E. Cobas, A. Friedman, O. Erve, J. Robinson, B. Jonker (2012)
Graphene as a tunnel barrier: graphene-based magnetic tunnel junctions.Nano letters, 12 6
B. Dlubak, Marie‐Blandine Martin, R. Weatherup, Heejun Yang, C. Deranlot, R. Blume, R. Schloegl, A. Fert, A. Anane, S. Hofmann, P. Sénéor, J. Robertson (2014)
Graphene-passivated nickel as an oxidation-resistant electrode for spintronics.ACS nano, 6 12
V. Karpan, G. Giovannetti, G. Giovannetti, P. Khomyakov, M. Talanana, A. Starikov, M. Zwierzycki, J. Brink, J. Brink, G. Brocks, P. Kelly (2007)
Graphite and graphene as perfect spin filters.Physical review letters, 99 17
P. Wei, Sunwoo Lee, F. Lemaitre, L. Pinel, D. Cutaia, W. Cha, F. Katmis, Yu Zhu, D. Heiman, J. Hone, J. Moodera, Ching-Tzu Chen (2015)
Strong interfacial exchange field in the graphene/EuS heterostructure.Nature materials, 15 7
L. Britnell, R. Gorbachev, R. Jalil, B. Belle, F. Schedin, M. Katsnelson, L. Eaves, S. Morozov, A. Mayorov, N. Peres, A. Neto, J. Leist, SUPARNA DUTTASINHA, L. Ponomarenko, K. Novoselov (2012)
Electron tunneling through ultrathin boron nitride crystalline barriers.Nano letters, 12 3
N. Tombros, C. Jozsa, M. Popinciuc, H. Jonkman, B. Wees (2007)
Electronic spin transport and spin precession in single graphene layers at room temperatureNature, 448
William Cullen, Mahito Yamamoto, Kristen Burson, Jianhao Chen, Chaun Jang, Liangya Li, Michael Fuhrer, Ellen Williams (2010)
High-fidelity conformation of graphene to SiO2 topographic features.Physical review letters, 105 21
R. Nair, M. Sepioni, I-Ling Tsai, O. Lehtinen, J. Keinonen, A. Krasheninnikov, T. Thomson, SUPARNA DUTTASINHA, I. Grigorieva (2011)
Spin-half paramagnetism in graphene induced by point defectsNature Physics, 8
Jae-Hyun Park, Hu-Jong Lee (2014)
Out-of-plane magnetoresistance in ferromagnet/graphene/ferromagnet spin-valve junctionsPhysical Review B, 89
S. Kopylov, A. Tzalenchuk, S. Kubatkin, V. Fal’ko (2010)
Charge transfer between epitaxial graphene and silicon carbideApplied Physics Letters, 97
J. Heras, E. Albano (1983)
Photoelectric work function and electrical resistance measurements on iron, cobalt and nickel films annealed at temperatures between 77 and 478 K☆Thin Solid Films, 106
M. Iqbal, S. Siddique, G. Hussain, M. Iqbal (2016)
Room temperature spin valve effect in the NiFe/Gr–hBN/Co magnetic tunnel junctionJournal of Materials Chemistry C, 4
M. Allen, O. Shtanko, I. Fulga, J. Wang, D. Nurgaliev, Kenji Watanabe, T. Taniguchi, A. Akhmerov, P. Jarillo-Herrero, L. Levitov, A. Yacoby (2017)
Observation of Electron Coherence and Fabry-Perot Standing Waves at a Graphene Edge.Nano letters, 17 12
Hongxin Yang, A. Vu, A. Hallal, N. Rougemaille, J. Coraux, Gong Chen, A. Schmid, M. Chshiev (2015)
Anatomy and Giant Enhancement of the Perpendicular Magnetic Anisotropy of Cobalt-Graphene Heterostructures.Nano letters, 16 1
Young‐Jun Yu, Yue Zhao, S. Ryu, L. Brus, Kwang Kim, P. Kim (2009)
Tuning the graphene work function by electric field effect.Nano letters, 9 10
S. Sarma, S. Adam, E. Hwang, E. Rossi (2010)
Electronic transport in two-dimensional grapheneReviews of Modern Physics, 83
S. Sakai, S. Majumdar, Z. Popov, P. Avramov, S. Entani, Yuri Hasegawa, Y. Yamada, H. Huhtinen, H. Naramoto, P. Sorokin, Y. Yamauchi (2016)
Proximity-Induced Spin Polarization of Graphene in Contact with Half-Metallic Manganite.ACS nano, 10 8
B. Baker, B. Johnson, G. Maire (1971)
Photoelectric work function measurements on nickel crystals and filmsSurface Science, 24
S. Liang, L. Ang (2015)
Electron Thermionic Emission from Graphene and a Thermionic Energy ConverterarXiv: Mesoscale and Nanoscale Physics
M. Allen, O. Shtanko, I. Fulga, J. Wang, D. Nurgaliev, K. Watanabe, T. Taniguchi, A. Akhmerov, P. Jarillo-Herrero, L. Levitov, A. Yacoby (2015)
Visualization of phase-coherent electron interference in a ballistic graphene Josephson junctionBulletin of the American Physical Society, 2016
J. Teresa, A. Barthélémy, A. Fert, J. Contour, R. Lyonnet, F. Montaigne, P. Sénéor, A. Vaurès (1999)
Inverse Tunnel Magnetoresistance in Co / SrTiO 3 / La 0.7 Sr 0.3 MnO 3 : New Ideas on Spin-Polarized TunnelingPhysical Review Letters, 82
S. Roche, J. Åkerman, B. Beschoten, J. Charlier, M. Chshiev, Saroj Dash, B. Dlubak, J. Fabian, A. Fert, M. Guimarães, F. Guinea, I. Grigorieva, C. Schönenberger, P. Sénéor, C. Stampfer, S. Valenzuela, X. Waintal, B. Wees (2015)
Graphene spintronics: the European Flagship perspective2D Materials, 2
J. Moodera, George Mathon (1999)
Spin polarized tunneling in ferromagnetic junctionsJournal of Magnetism and Magnetic Materials, 200
M. Shalom, M. Zhu, V. Fal’ko, A. Mishchenko, A. Kretinin, K. Novoselov, C. Woods, K. Watanabe, T. Taniguchi, SUPARNA DUTTASINHA, J. Prance (2015)
Quantum oscillations of the critical current and high-field superconducting proximity in ballistic grapheneNature Physics, 12
D. Eastman (1970)
PHOTOELECTRIC WORK FUNCTIONS OF TRANSITION, RARE-EARTH, AND NOBLE METALS.Physical Review B, 2
A. Mayorov, R. Gorbachev, S. Morozov, L. Britnell, R. Jalil, L. Ponomarenko, P. Blake, K. Novoselov, Kenji Watanabe, T. Taniguchi, SUPARNA DUTTASINHA (2011)
Micrometer-scale ballistic transport in encapsulated graphene at room temperature.Nano letters, 11 6
André Dankert, M. Kamalakar, A. Wajid, R. Patel, S. Dash (2014)
Tunnel magnetoresistance with atomically thin two-dimensional hexagonal boron nitride barriersNano Research, 8
P. Blake, R. Yang, S. Morozov, F. Schedin, L. Ponomarenko, A. Zhukov, I. Grigorieva, K. Novoselov, SUPARNA DUTTASINHA (2008)
Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality pointSolid State Communications, 149
Florian Godel, M. Kamalakar, M. Kamalakar, Bernard Doudin, Y. Henry, D. Halley, J. Dayen (2014)
Voltage-controlled inversion of tunnel magnetoresistance in epitaxial nickel/graphene/MgO/cobalt junctionsApplied Physics Letters, 105
Graphene is hailed as an ideal material for spintronics due to weak intrinsic spin–orbit interaction that facilitates lateral spin transport and tunability of its electronic properties, including a possibility to induce magnetism in graphene. Another promising application of graphene is related to its use as a spacer separating ferromagnetic metals (FMs) in vertical magnetoresistive devices, the most prominent class of spintronic devices widely used as magnetic sensors. In particular, few-layer graphene was predicted to act as a perfect spin filter. Here we show that the role of graphene in such devices (at least in the absence of epitaxial alignment between graphene and the FMs) is different and determined by proximity-induced spin splitting and charge transfer with adjacent ferromagnetic metals, making graphene a weak FM electrode rather than a spin filter. To this end, we report observations of magnetoresistance (MR) in vertical Co-graphene-NiFe junctions with 1–4 graphene layers separating the ferromagnets, and demonstrate that the dependence of the MR sign on the number of layers and its inversion at relatively small bias voltages is consistent with spin transport between weakly doped and differently spin-polarized layers of graphene. The proposed interpretation is supported by the observation of an MR sign reversal in biased Co-graphene-hBN-NiFe devices and by comprehensive structural characterization. Our results suggest a new architecture for vertical devices with electrically controlled MR.
2D Materials – IOP Publishing
Published: Sep 1, 2017
Read and print from thousands of top scholarly journals.
Already have an account? Log in
Bookmark this article. You can see your Bookmarks on your DeepDyve Library.
To save an article, log in first, or sign up for a DeepDyve account if you don’t already have one.
Copy and paste the desired citation format or use the link below to download a file formatted for EndNote
Access the full text.
Sign up today, get DeepDyve free for 14 days.
All DeepDyve websites use cookies to improve your online experience. They were placed on your computer when you launched this website. You can change your cookie settings through your browser.