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Byung-Chul Lee, Chul-min Kim, S. Kim, Gyu-Tae Kim, Min-Kyu Joo (2020)
Effect of interlayer tunneling barrier on carrier transport and fluctuation in multilayer ReS2Applied Physics Letters, 117
Seunghyun Song, Min-Kyu Joo, M. Neumann, H. Kim, Young Lee (2017)
Probing defect dynamics in monolayer MoS2 via noise nanospectroscopyNature Communications, 8
Hongjun Liu, Jinglei Chen, Hongyi Yu, Fang Yang, Lu Jiao, Gui-Bin Liu, W. Ho, C. Gao, J. Jia, W. Yao, M. Xie (2015)
Observation of intervalley quantum interference in epitaxial monolayer tungsten diselenideNature Communications, 6
A. Tavkhelidze, A. Bibilashvili, L. Jangidze, N. Gorji (2021)
Fermi-Level Tuning of G-Doped LayersNanomaterials, 11
E. Calman, M. Fogler, L. Butov, S. Hu, A. Mishchenko, SUPARNA DUTTASINHA (2017)
Indirect excitons in van der Waals heterostructures at room temperatureNature Communications, 9
S. Kim, Da-Woom Jeong, Hyebin Lee, Inyeob Na, S. Kim, Doyoon Kim, S. Lim, Byung Lee, Seungwon Lee, Sang Yang, Gyu-Tae Kim, Min-Kyu Joo (2020)
Drain induced barrier increasing in multilayer ReS22D Materials, 7
(2019)
First-principles based ballistic transport simulation of monolayer and few-layer InSe FETs Jpn
(2013)
Aparecido-Ferreira A and Tsukagoshi K 2013 Thickness-dependent interfacial coulomb scattering in atomically thin field-effect transistors
Min-Kyu Joo, Yoojoo Yun, H. Ji, D. Suh (2018)
Coulomb scattering mechanism transition in 2D layered MoTe2: effect of high-κ passivation and Schottky barrier heightNanotechnology, 30
(2015)
A and Kis A 2015 Thickness-dependent mobility in two-dimensional MoS2 transistors Nanoscale
P. Bolshakov, Christopher Smyth, A. Khosravi, P. Zhao, P. Hurley, C. Hinkle, R. Wallace, C. Young (2019)
Contact Engineering for Dual-Gate MoS2 Transistors Using O2 Plasma ExposureACS Applied Electronic Materials
Byung Lee, Junhong Na, J. Choi, H. Ji, Gyu-Tae Kim, Min-Kyu Joo (2018)
Probing Distinctive Electron Conduction in Multilayer Rhenium DisulfideAdvanced Materials, 31
K. Novoselov, SUPARNA DUTTASINHA, S. Morozov, D. Jiang, Y. Zhang, S. Dubonos, I. Grigorieva, A. Firsov (2004)
Electric Field Effect in Atomically Thin Carbon FilmsScience, 306
B. Moon, J. Bae, Min-Kyu Joo, Homin Choi, G. Han, H. Lim, Young Lee (2018)
Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS2Nature Communications, 9
Seok Namgung, S. Yang, Kyung Park, Ah-Jin Cho, Hojoong Kim, J. Kwon (2015)
Influence of post-annealing on the off current of MoS2 field-effect transistorsNanoscale Research Letters, 10
Byung-Chul Lee, Chul-min Kim, H. Jang, Jae Lee, Min-Kyu Joo, Gyu-Tae Kim (2017)
Degradation pattern of black phosphorus multilayer field−effect transistors in ambient conditions: Strategy for contact resistance engineering in BP transistorsApplied Surface Science, 419
D. Lembke, A. Allain, A. Kis (2015)
Thickness-dependent mobility in two-dimensional MoS₂ transistors.Nanoscale, 7 14
M. Buscema, J. Island, D. Groenendijk, Sofya Blanter, G. Steele, H. Zant, A. Castellanos-Gomez (2015)
Photocurrent Generation with Two‐Dimensional van der Waals SemiconductorsChemInform, 46
(2020)
Understanding tunable photoresponsivity of two-dimensional multilayer phototransistors: interplay 2D Mater
Saptarshi Das, J. Appenzeller (2013)
Where does the current flow in two-dimensional layered systems?Nano letters, 13 7
K. Novoselov, D. Jiang, F. Schedin, T. Booth, V. Khotkevich, S. Morozov, SUPARNA DUTTASINHA (2005)
Two-dimensional atomic crystals.Proceedings of the National Academy of Sciences of the United States of America, 102 30
Song-Lin Li, K. Wakabayashi, Yong Xu, S. Nakaharai, K. Komatsu, Wenwu Li, Yen‐Fu Lin, A. Aparecido-Ferreira, K. Tsukagoshi (2013)
Thickness-dependent interfacial Coulomb scattering in atomically thin field-effect transistors.Nano letters, 13 8
Yuanbo Zhang, Yan-Wen Tan, H. Stormer, P. Kim (2005)
Experimental observation of the quantum Hall effect and Berry's phase in grapheneNature, 438
Youngjo Jin, Min-Kyu Joo, B. Moon, H. Kim, Sanghyup Lee, H. Jeong, Young Lee (2020)
Coulomb drag transistor using a graphene and MoS2 heterostructureCommunications Physics, 3
Saptarshi Das, J. Appenzeller (2013)
Screening and interlayer coupling in multilayer MoS2physica status solidi (RRL) – Rapid Research Letters, 7
Chul-min Kim, Moonsoo Sung, S. Kim, Byung Lee, Yeonsu Kim, Doyoon Kim, Yeeun Kim, Youkyung Seo, C. Theodorou, Gyu-Tae Kim, Min-Kyu Joo (2021)
Restricted Channel Migration in 2D Multilayer ReS2.ACS applied materials & interfaces
W. Choi, Nitin Choudhary, G. Han, Ju-Hoon Park, D. Akinwande, Y. Lee (2017)
Recent development of two-dimensional transition metal dichalcogenides and their applicationsMaterials Today, 20
Hongsheng Liu, Nannan Han, Jijun Zhao (2015)
Atomistic insight into the oxidation of monolayer transition metal dichalcogenides: from structures to electronic propertiesRSC Advances, 5
Y. Liu, Xi Yang, X. Hong, M. Si, F. Chi, Yong Guo (2013)
A high-efficiency double quantum dot heat engineApplied Physics Letters, 103
X. Cui, Gwan‐Hyoung Lee, Young Kim, Ghidewon Arefe, Pinshane Huang, Chul‐Ho Lee, Daniel Chenet, Xian Zhang, Lei Wang, Fan Ye, F. Pizzocchero, Bjarke Jessen, Kenji Watanabe, T. Taniguchi, D. Muller, T. Low, P. Kim, J. Hone (2015)
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.Nature nanotechnology, 10 6
S. Tongay, S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, W. Fan, Kai Liu, Jian Zhou, Jian Zhou, Ying-Sheng Huang, C. Ho, Jinyuan Yan, D. Ogletree, S. Aloni, J. Ji, Shushen Li, Jingbo Li, F. Peeters, Junqiao Wu, Junqiao Wu, Junqiao Wu (2014)
Monolayer behaviour in bulk ReS2 due to electronic and vibrational decouplingNature Communications, 5
D. Sim, Mincheol Kim, S. Yim, Min‐Jae Choi, Jaesuk Choi, S. Yoo, Y. Jung (2015)
Controlled Doping of Vacancy-Containing Few-Layer MoS2 via Highly Stable Thiol-Based Molecular Chemisorption.ACS nano, 9 12
Kai Xu, H. Deng, Zhenxing Wang, Yun Huang, Feng Wang, Shu-Shen Li, Jun-Wei Luo, Jun He (2015)
Sulfur vacancy activated field effect transistors based on ReS2 nanosheets.Nanoscale, 7 38
Numerous carrier scatterers, such as atomic defects, fixed oxide charges, impurities, chemical residues, and undesired surface adsorbates, including oxygen and water molecules, strongly degrade the carrier mobility of atomically thin two-dimensional (2D) materials. However, the effect of surface adsorbates and surface oxidation on the carrier density profile along the thickness of 2D multilayers is not well known, particularly for a substantial interruption in the formation of the top-surface channel. Here, we uncover a hidden surface channel in p-type black phosphorus and n-type rhenium disulfide multilayers originating from undesired ambient adsorbates and surface oxides that not only populate hole density (or reduce electron density) but also suppress carrier mobility. The absence of a second peak in the transconductance curve under ambient conditions indicates the disappearance of the top-surface channel inside the 2D multilayers, which is a possible indicator for the cleanliness of the top surface and can be used in gas sensor applications. Moreover, the negligible variation in the drain bias polarity-dependent turn-on voltage for the bottom channel under ambient conditions validates the exclusive contribution of surface adsorbates to the formation of the top channel in 2D multilayers. Our results provide a novel insight into the distinct carrier transport in 2D optoelectronic devices and diverse sensors.
2D Materials – IOP Publishing
Published: Jul 1, 2022
Keywords: two-dimensional materials; multilayers; carrier transport; surface doping; interlayer resistance
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