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Naito Masamichi, Nishigaki Satoshi (2017)
AN STM OBSERVATION OF THE INITIAL PROCESS OF GRAPHITIZATION AT THE 6H-SiC(000 1) SURFACE
O. Yazyev, S. Louie (2010)
Topological defects in graphene: Dislocations and grain boundariesPhysical Review B, 81
Pinshane Huang, C. Ruiz-Vargas, A. Zande, W. Whitney, M. Levendorf, J. Kevek, Shivank Garg, J. Alden, C. Hustedt, Ye Zhu, Jiwoong Park, P. McEuen, D. Muller (2010)
Grains and grain boundaries in single-layer graphene atomic patchwork quiltsNature, 469
K. Clark, Xiaoguang Zhang, G. Gu, Jewook Park, Guowei He, R. Feenstra, An‐Ping Li (2014)
Energy Gap Induced by Friedel Oscillations Manifested as Transport Asymmetry at Monolayer-Bilayer Graphene BoundariesPhysical Review X, 4
B. An, S. Fukuyama, K. Yokogawa (2002)
Graphitization of 6H–SiC(0001̄) Surface by Scanning Tunneling MicroscopyJapanese Journal of Applied Physics, 41
L. Tapasztó, P. Nemes-Incze, G. Dobrik, K. Yoo, C. Hwang, L. Biró (2012)
Mapping the electronic properties of individual graphene grain boundariesApplied Physics Letters, 100
S. Ji, J. Hannon, R. Tromp, V. Perebeinos, J. Tersoff, F. Ross (2012)
Atomic-scale transport in epitaxial graphene.Nature materials, 11 2
Sami Malola, H. Hakkinen, P. Koskinen (2010)
Structural, chemical and dynamical trends in graphene grain boundaries
M. Naitoh, M. Kitada, S. Nishigaki, N. Tōyama, F. Shoji (2003)
An STM Observation of the Initial Process of Graphitization at the ${\rm 6H \mbox-SiC}(000{\bar 1})$ SurfaceSurface Review and Letters, 10
L. Biró, P. Lambin (2013)
Grain boundaries in graphene grown by chemical vapor depositionNew Journal of Physics, 15
Weigang Wang, K. Munakata, M. Rozler, M. Beasley (2012)
Local transport measurements at mesoscopic length scales using scanning tunneling potentiometry.Physical review letters, 110 23
Yingying Wang, Zhenhua Ni, Lei Liu, Yanhong Liu, C. Cong, T. Yu, Xiaojun Wang, D. Shen, Zexiang Shen (2010)
Stacking-dependent optical conductivity of bilayer graphene.ACS nano, 4 7
A. Bannani, C. Bobisch, R. Möller (2008)
Local potentiometry using a multiprobe scanning tunneling microscope.The Review of scientific instruments, 79 8
R. Tromp, J. Hannon (2009)
Thermodynamics and kinetics of graphene growth on SiC(0001).Physical review letters, 102 10
W. Pong, J. Bendall, C. Durkan (2007)
Observation and investigation of graphite superlattice boundaries by scanning tunneling microscopySurface Science, 601
J. Červenka, J. Červenka, M. Katsnelson, Cfj Flipse (2009)
Room-temperature ferromagnetism in graphite driven by two-dimensional networks of point defectsNature Physics, 5
Xuesong Li, Weiwei Cai, J. An, Seyoung Kim, J. Nah, Dongxing Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. Banerjee, L. Colombo, R. Ruoff (2009)
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper FoilsScience, 324
C. Berger, Zhi-min Song, Tianbo Li, Xuebin Li, A. Ogbazghi, R. Feng, Z. Dai, A. Marchenkov, E. Conrad, P. First, W. Heer (2004)
Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics.Journal of Physical Chemistry B, 108
F. Varchon, P. Mallet, L. Magaud, J. Veuillen (2008)
Rotational disorder in few-layer graphene films on6H−SiC(000−1): A scanning tunneling microscopy studyPhysical Review B, 77
Kwanpyo Kim, Zonghoon Lee, Zonghoon Lee, W. Regan, W. Regan, Christian Kisielowski, M. Crommie, M. Crommie, A. Zettl, A. Zettl (2011)
Grain boundary mapping in polycrystalline graphene.ACS nano, 5 3
L. Biedermann, M. Bolen, M. Capano, D. Zemlyanov, R. Reifenberger (2009)
Insights into few-layer epitaxial graphene growth on 4H-SiC(000(1)over-bar substrates from STM studiesPhysical Review B, 79
Yuanyue Liu, B. Yakobson (2010)
Cones, pringles, and grain boundary landscapes in graphene topology.Nano letters, 10 6
C. Berger, Zhi-min Song, Xuebin Li, Xiaosong Wu, Nate Brown, C. Naud, D. Mayou, Tianbo Li, J. Hass, A. Marchenkov, E. Conrad, P. First, W. Heer (2006)
Electronic Confinement and Coherence in Patterned Epitaxial GrapheneScience, 312
G. Rutter, N. Guisinger, Jason Crain, Emily Jarvis, M. Stiles, Tianbo Li, P. First, J. Stroscio (2007)
Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopyPhysical Review B, 76
Y. Hao, M. Bharathi, Lei Wang, Yuanyue Liu, Hua Chen, S. Nie, Xiaohan Wang, H. Chou, C. Tan, B. Fallahazad, H. Ramanarayan, Carl Magnuson, E. Tutuc, B. Yakobson, K. Mccarty, Yong-Wei Zhang, P. Kim, J. Hone, L. Colombo, R. Ruoff (2013)
The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on CopperScience, 342
O. Yazyev, S. Louie (2010)
Electronic transport in polycrystalline graphene.Nature materials, 9 10
Tony Low, V. Perebeinos, J. Tersoff, P. Avouris (2012)
Deformation and scattering in graphene over substrate steps.Physical review letters, 108 9
A. Mesaros, S. Papanikolaou, Cfj Flipse, D. Sadri, J. Zaanen (2010)
Electronic states of graphene grain boundariesPhysical Review B, 82
I. Forbeaux, J. Themlin, J. Debever (1999)
High-temperature graphitization of the 6H-SiC (0001̄) faceSurface Science, 442
E. Hwang, S. Sarma (2008)
Single-particle relaxation time versus transport scattering time in a two-dimensional graphene layerPhysical Review B, 77
P. Mallet, F. Varchon, C. Naud, L. Magaud, C. Berger, J. Veuillen (2007)
Electron states of mono and bilayer graphene on SiC probed by scanning-tunneling microscopyPhysical Review B, 76
W. Norimatsu, M. Kusunoki (2014)
Epitaxial graphene on SiC{0001}: advances and perspectives.Physical chemistry chemical physics : PCCP, 16 8
Jiri Cervenka, C. Flipse (2008)
Structural and electronic properties of grain boundaries in graphite : planes of periodically distributed point defectsPhysical Review B, 79
J. Hannon, R. Tromp (2008)
Pit formation during graphene synthesis on SiC(0001):In situelectron microscopyPhysical Review B, 77
T. Yamauchi, T. Tokunaga, M. Naitoh, S. Nishigaki, N. Tōyama, F. Shoji, M. Kusunoki (2006)
Influence of surface structure modifications on the growth of carbon-nanotubes on the SiC(0001¯) surfacesSurface Science, 600
An‐Ping Li, K. Clark, X-G Zhang, A. Baddorf (2013)
Electron Transport at the Nanometer‐Scale Spatially Revealed by Four‐Probe Scanning Tunneling MicroscopyAdvanced Functional Materials, 23
Tae-Hwan Kim, X-G Zhang, D. Nicholson, B. Evans, N. Kulkarni, B. Radhakrishnan, E. Kenik, An‐Ping Li (2010)
Large discrete resistance jump at grain boundary in copper nanowire.Nano letters, 10 8
W. Norimatsu, M. Kusunoki (2010)
Formation process of graphene on SiC (0 0 0 1)Physica E-low-dimensional Systems & Nanostructures, 42
S. Bae, Hyeongkeun Kim, Youngbin Lee, Xiangfan Xu, Jae-Sung Park, Yi Zheng, Jayakumar Balakrishnan, T. Lei, Hyeoungkeun Kim, Y. Song, Young-Jin Kim, Kwang Kim, B. Ozyilmaz, Jong-Hyun Ahn, B. Hong, S. Iijima (2009)
Roll-to-roll production of 30-inch graphene films for transparent electrodes.Nature nanotechnology, 5 8
J. Homoth, M. Wenderoth, T. Druga, L. Winking, R. Ulbrich, C. Bobisch, B. Weyers, A. Bannani, E. Zubkov, A. Bernhart, M. Kaspers, R. Möller (2009)
Electronic transport on the nanoscale: ballistic transmission and Ohm's law.Nano letters, 9 4
S. Barja, Sebastian Wickenburg, Zhen-Fei Liu, Yi Zhang, Yi Zhang, H. Ryu, M. Ugeda, M. Ugeda, Z. Hussain, Z. Shen, S. Mo, E. Wong, Miquel Salmeron, Miquel Salmeron, Feng Wang, Feng Wang, Feng Wang, M. Crommie, M. Crommie, M. Crommie, D. Ogletree, J. Neaton, A. Weber-Bargioni (2016)
Charge density wave order in 1D mirror twin boundaries of single-layer MoSe2Nature Physics, 12
K. Clark, X-G Zhang, I. Vlassiouk, Guowei He, R. Feenstra, An‐Ping Li (2013)
Spatially resolved mapping of electrical conductivity across individual domain (grain) boundaries in graphene.ACS nano, 7 9
J. Hass, F. Varchon, J. Millán-Otoya, M. Sprinkle, N. Sharma, W. Heer, C. Berger, C. Berger, P. First, L. Magaud, E. Conrad (2008)
Why multilayer graphene on 4H-SiC(0001[over ]) behaves like a single sheet of graphene.Physical review letters, 100 12
F. Varchon, R. Feng, J. Hass, Xuebin Li, B. Nguyen, C. Naud, P. Mallet, J. Veuillen, C. Berger, C. Berger, E. Conrad, L. Magaud (2007)
Electronic structure of epitaxial graphene layers on SiC: effect of the substrate.Physical review letters, 99 12
A. Tsen, L. Brown, M. Levendorf, F. Ghahari, Pinshane Huang, Robin Havener, C. Ruiz-Vargas, D. Muller, P. Kim, Jiwoong Park (2012)
Supplementary Materials for Tailoring Electrical Transport Across Grain Boundaries in Polycrystalline Graphene
C. Tao, Liying Jiao, O. Yazyev, Yen-Chia Chen, Juanjuan Feng, Xiaowei Zhang, R. Capaz, J. Tour, A. Zettl, S. Louie, H. Dai, M. Crommie (2011)
Spatially resolving edge states of chiral graphene nanoribbonsNature Physics, 7
Xiaosong Wu, Yike Hu, M. Ruan, N. Madiomanana, J. Hankinson, M. Sprinkle, C. Berger, W. Heer (2009)
Half integer quantum Hall effect in high mobility single layer epitaxial grapheneApplied Physics Letters, 95
Qingkai Yu, L. Jauregui, Wei Wu, R. Colby, Jifa Tian, Z. Su, H. Cao, Zhihong Liu, Deepak Pandey, Dongguang Wei, Ting-Fung Chung, Peng Peng, N. Guisinger, E. Stach, J. Bao, S. Pei, Yong Chen (2010)
Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition.Nature materials, 10 6
M. Orlita, C. Faugeras, P. Płochocka, P. Neugebauer, G. Martínez, D. Maude, A. Barra, M. Sprinkle, C. Berger, W. Heer, M. Potemski (2008)
Approaching the dirac point in high-mobility multilayer epitaxial graphene.Physical review letters, 101 26
We measure the role of structural defects, including grain boundaries and step edges, in determining the electrical transport characteristics of polycrystalline graphene monolayers synthesized on C-face SiC(0 0 0 ) by thermal decomposition. A combination of multi-probe scanning tunneling microscopy/potentiometry and low-energy electron microscopy allows the transport properties of individual grain boundaries to be correlated with their misorientation and atomic-level structure, without any device fabrication. We find that different types of grain boundary show dramatically different transport properties, and that boundaries can change structure and resistivity along their length. Boundary regions made up of dislocation superlattices separated by continuous graphene exhibit relatively low resistivity which is comparable to the resistivity of the graphene sheet itself. Other grain boundaries display trench structures with a resistivity 1–2 orders of magnitude greater and sufficient to dominate transport through the polycrystalline sheet. We also measure the transport properties of step edges and monolayer-bilayer boundaries on C-face graphene and compare them to Si-face graphene. Such measurements offer a guideline for optimizing graphene growth on SiC to improve its electronic properties.
2D Materials – IOP Publishing
Published: Jul 1, 2018
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