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/lp/iop-publishing/effects-of-the-sequential-implantation-of-mg-and-n-ions-into-gan-for-p-9paLmZ93FF
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- Publisher
- IOP Publishing
- Copyright
- © 2021 The Japan Society of Applied Physics
- ISSN
- 1882-0778
- eISSN
- 1882-0786
- DOI
- 10.35848/1882-0786/ac2ae7
- Publisher site
- See Article on Publisher Site
Abstract
The sequential implantation of Mg and N ions into GaN was investigated using conventional rapid thermal annealing and ultra-high-pressure annealing (UHPA). In cathodoluminescence, the green luminescence related to nitrogen vacancies (VNs) was mostly suppressed at the Mg/N ratio of 0.5–1.0, whereas the donor–acceptor pair (DAP) emission as a signature of Mg acceptors was maintained high. The excess N implantation reduced the DAP emission through the formation of nonradiative recombination centers. The combined process of optimal Mg/N implantation and UHPA at 1673 K improved ohmic contacts by increasing Mg concentration and suppressing VNs near the surface.
Journal
Applied Physics Express – IOP Publishing
Published: Nov 1, 2021
Keywords: GaN; Mg implantation; N implantation; GaN power devices; ultra-high-pressure annealing