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/lp/iop-publishing/commensurate-and-incommensurate-double-moire-interference-in-graphene-Bqaossak3g
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- Copyright
- Copyright © 2020 IOP Publishing Ltd
- eISSN
- 2053-1583
- DOI
- 10.1088/2053-1583/ab891a
- Publisher site
- See Article on Publisher Site
Abstract
Interference of double moire patterns of graphene (G) encapsulated by hexagonal boron nitride (BN) can alter the electronic structure features near the primary/secondary Dirac points and the electron-hole symmetry introduced by a single G/BN moire pattern depending on the relative stacking arrangements of the top/bottom BN layers. We show that strong interference effects are found in nearly aligned BN/G/BN and BN/G/NB and obtain the evolution of the associated density of states as a function of moire superlattice twist angles. For equal moire periods and commensurate patterns with Δφ = 0° modulo 60° moire angle differences the patterns can add up constructively leading to large pseudogaps of about ∼ 50 meV on the hole side or cancel out destructively depending on their relative sliding, e.g. partially recovering electron-hole symmetry. The electronic structure of moire quasicrystals for Δφ = 30° differences reveal double moire features in the density of states with almost isolated van Hove singularities where we can expect strong correlations.
Journal
2D Materials – IOP Publishing
Published: Jul 1, 2020