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K. Horio, Y. Iwatsu, A. Oguchi, H. Yanai (1990)
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Two-Dimensional Simulation of AlGaAs/GaAs HBTs with Various Collector Structures
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Cutoff frequency T characteristics for AlGaAsGaAs HBTs with planar structures are studied, by twodimensional simulation, with an emphasis placed on their dependences on the collector parameters. It is shown that the subcollector resistance becomes an important factor to achieve a higher T in the high current region, and so it should be made as low as possible. Effects of introducing semiinsulating external collectors are also studied. It is shown that the introduction of semiinsulating layer is effective to improve the T characteristics provided that it is slightly away from the intrinsic collector region.
COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing
Published: Apr 1, 1993
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