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References (3)
-
R. Fair (1981)
Physics and Chemistry of Impurity Diffusion and Oxidation of Silicon -
B. Deal, A. Grove (1965)
General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 36
-
M. Atalla, E. Tannenbaum (1960)
Impurity redistribution and junction formation in silicon by thermal oxidationBell System Technical Journal, 39
- Publisher
- Emerald Publishing
- Copyright
- Copyright © Emerald Group Publishing Limited
- ISSN
- 0332-1649
- DOI
- 10.1108/eb009980
- Publisher site
- See Article on Publisher Site
Abstract
We have simulated the technological processes for the well formation in CMOS technology. The general problem of coupled impurities diffusion under oxidizing conditions has been treated by the finiteelement method. The obtained results have been compared to measured profiles. The study of the influence of the technological parameters on the well's structures allowed us to optimize the lateral diffusion, as well as the effects of the field oxidation.
Journal
COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing
Published: Apr 1, 1983