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Electrical potentials in a junction field transistor can be calculated using a simplified model based on a complete depletion assumption. This gives rise to a free boundary problem. We show here how we can approximate this problem with a quasi‐variational inequality technique and the shape optimization method. A detailed analysis of these methods is presented. Using some numerical experiments we compare our results with the solution of the discrete drift‐diffusion system, accomplished with a Gummel‐like algorithm. The numerical results suggest that the methods proposed here work successfully and that the shape optimization technique provides a reasonably free boundary without excessive iterations.
COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing
Published: Jun 1, 1999
Keywords: Finite element; Free boundary problems; Semiconductors; Shape optimization
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