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Quasi‐variational inequality and shape optimization for solution of a free boundary problem

Quasi‐variational inequality and shape optimization for solution of a free boundary problem Electrical potentials in a junction field transistor can be calculated using a simplified model based on a complete depletion assumption. This gives rise to a free boundary problem. We show here how we can approximate this problem with a quasi‐variational inequality technique and the shape optimization method. A detailed analysis of these methods is presented. Using some numerical experiments we compare our results with the solution of the discrete drift‐diffusion system, accomplished with a Gummel‐like algorithm. The numerical results suggest that the methods proposed here work successfully and that the shape optimization technique provides a reasonably free boundary without excessive iterations. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering Emerald Publishing

Quasi‐variational inequality and shape optimization for solution of a free boundary problem

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References (13)

Publisher
Emerald Publishing
Copyright
Copyright © 1999 MCB UP Ltd. All rights reserved.
ISSN
0332-1649
DOI
10.1108/03321649910264154
Publisher site
See Article on Publisher Site

Abstract

Electrical potentials in a junction field transistor can be calculated using a simplified model based on a complete depletion assumption. This gives rise to a free boundary problem. We show here how we can approximate this problem with a quasi‐variational inequality technique and the shape optimization method. A detailed analysis of these methods is presented. Using some numerical experiments we compare our results with the solution of the discrete drift‐diffusion system, accomplished with a Gummel‐like algorithm. The numerical results suggest that the methods proposed here work successfully and that the shape optimization technique provides a reasonably free boundary without excessive iterations.

Journal

COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic EngineeringEmerald Publishing

Published: Jun 1, 1999

Keywords: Finite element; Free boundary problems; Semiconductors; Shape optimization

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