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This paper aims to present investigation on textured polyimide (PI) substrate for enhanced light absorption in flexible black silicon (bSi).Design/methodology/approachFlexible bSi with thickness of 60 µm is used in this work. To texture the PI substrate, copper-seeding technique is used. A copper (Cu) layer with a thickness of 100 nm is deposited on PI substrate by sputtering. The substrate is then annealed at 400°C in air ambient for different durations of 60, 90 and 120 min.FindingsWith 90 min of annealing, root mean square roughness as large as 130 nm, peak angle of 24° and angle distribution of up to 87° are obtained. With this texturing condition, the flexible bSi exhibits maximum potential short-circuit current density (Jmax) of 40.33 mA/cm2, or 0.45 mA/cm2 higher compared to the flexible bSi on planar PI. The improvement is attributed to enhanced light scattering at the flexible bSi/textured PI interface. The findings from this work demonstrate that the optimization of the PI texturing via Cu-seeding process leads to an enhancement in the long wavelengths light absorption and potential Jmax in the flexible bSi absorber.Originality/valueDemonstrated enhanced light absorption and potential Jmax in flexible bSi on textured PI substrate (compared to planar PI substrate) by Cu-seeding with different annealing durations.
Microelectronics International – Emerald Publishing
Published: Jan 2, 2023
Keywords: Polyimide; Texturing; Absorption; Black silicon; MCCE
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