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NUMERICAL COMPUTATION OF ELECTRONIC PROPERTIES OF SEMICONDUCTOR HETEROSTRUCTURES FOR QUANTUM DEVICE APPLICATIONS

NUMERICAL COMPUTATION OF ELECTRONIC PROPERTIES OF SEMICONDUCTOR HETEROSTRUCTURES FOR QUANTUM... We present a numerical selfconsistent method to solve for the electronic properties within a flexible and accurate theoretical model of selectivelydoped semiconductor heterostructures based on a twoband k.P effectivemassapproximation Hamiltonian that includes nonparabolicity, stress, piezoelectric, finite temperature, manybody, and DX center effects. The method can handle any planar configuration of heterostructures. Selfconsistency is achieved quickly via Broyden's method. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering Emerald Publishing

NUMERICAL COMPUTATION OF ELECTRONIC PROPERTIES OF SEMICONDUCTOR HETEROSTRUCTURES FOR QUANTUM DEVICE APPLICATIONS

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References (14)

Publisher
Emerald Publishing
Copyright
Copyright © Emerald Group Publishing Limited
ISSN
0332-1649
DOI
10.1108/eb010143
Publisher site
See Article on Publisher Site

Abstract

We present a numerical selfconsistent method to solve for the electronic properties within a flexible and accurate theoretical model of selectivelydoped semiconductor heterostructures based on a twoband k.P effectivemassapproximation Hamiltonian that includes nonparabolicity, stress, piezoelectric, finite temperature, manybody, and DX center effects. The method can handle any planar configuration of heterostructures. Selfconsistency is achieved quickly via Broyden's method.

Journal

COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic EngineeringEmerald Publishing

Published: Feb 1, 1995

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