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We present a numerical selfconsistent method to solve for the electronic properties within a flexible and accurate theoretical model of selectivelydoped semiconductor heterostructures based on a twoband k.P effectivemassapproximation Hamiltonian that includes nonparabolicity, stress, piezoelectric, finite temperature, manybody, and DX center effects. The method can handle any planar configuration of heterostructures. Selfconsistency is achieved quickly via Broyden's method.
COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing
Published: Feb 1, 1995
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