Access the full text.
Sign up today, get DeepDyve free for 14 days.
M. Romero, K. Alberi, Ina Martin, K. Jones, D. Young, Yong Yan, C. Teplin, M. Al‐Jassim, P. Stradins, H. Branz (2010)
Nanoscale measurements of local junction breakdown in epitaxial film silicon solar cellsApplied Physics Letters, 97
L. Grmela, P. Škarvada, P. Tománek, R. Macků, Steve Smith (2012)
Local investigation of thermal dependence of light emission from reverse-biased monocrystalline silicon solar cellsSolar Energy Materials and Solar Cells, 96
M. Kasemann (2008)
Progress in silicon solar cell characterization with infrared imaging methods
L. Kronik, Y. Shapira (2001)
Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineeringSurface and Interface Analysis, 31
S. Rein (2005)
Lifetime Spectroscopy : A Method of Defect Characterization in Silicon for Photovoltaic Applications
P. Tománek, P. Škarvada, R. Macků, L. Grmela (2010)
Detection and Localization of Defects in Monocrystalline Silicon Solar CellAdvances in Optical Technologies, 2010
D. Schroder (1990)
Semiconductor Material and Device Characterization
P. Koktavy, M. Raska, P. Sadovský, Ondřej Krčál (2007)
Noise Diagnostics of Solar Cells, 922
P. Škarvada, Tománek, L. Grmela, Steve Smith (2010)
Microscale localization of low light emitting spots in reversed-biased silicon solar cellsSolar Energy Materials and Solar Cells, 94
M. Unlu, B. Goldberg, W. Herzog, D. Sun, E. Towe (1995)
NEAR-FIELD OPTICAL BEAM INDUCED CURRENT MEASUREMENTS ON HETEROSTRUCTURESApplied Physics Letters, 67
J. Haunschild, M. Glatthaar, M. Kasemann, S. Rein, E. Weber (2009)
Fast series resistance imaging for silicon solar cells using electroluminescencephysica status solidi (RRL) – Rapid Research Letters, 3
O. Breitenstein, J. Bauer, M. Kittler, T. Arguirov, W. Seifert (2008)
EBIC and luminescence studies of defects in solar cells.Scanning, 30 4
D. Coffey, O. Reid, D. Rodovsky, G. Bartholomew, D. Ginger (2007)
Mapping local photocurrents in polymer/fullerene solar cells with photoconductive atomic force microscopy.Nano letters, 7 3
Monocrystalline silicon is still very interesting material for solar cells fabrication due to its quality and external efficiency. Nevertheless during a tailoring of eligible silicon wafers, some inhomogeneities or irregularities emerge and provide defects which give trouble to good operation of solar panels. Generally, there are two classes of defects in silicon wafer: material defects due to imperfections or irregularity in crystal structure (point, line, square or volume defects), and defects induced by wafer processing. To avoid a use of damaged cells, macroscopic and microscopic measurement techniques must be applied. In this paper we present a microscopic method combining electrical noise measurements with scanning probe localization of luminous micro-spots defects. The paper brings experimental results showing local electric and optical investigations of defects in etched monocrystalline silicon solar cells and a use of cold field emission tungsten electrode as a local probe for apertureless scanning near-field optical microscope.
World Journal of Engineering – Emerald Publishing
Published: Jun 1, 2013
Read and print from thousands of top scholarly journals.
Already have an account? Log in
Bookmark this article. You can see your Bookmarks on your DeepDyve Library.
To save an article, log in first, or sign up for a DeepDyve account if you don’t already have one.
Copy and paste the desired citation format or use the link below to download a file formatted for EndNote
Access the full text.
Sign up today, get DeepDyve free for 14 days.
All DeepDyve websites use cookies to improve your online experience. They were placed on your computer when you launched this website. You can change your cookie settings through your browser.