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References (7)
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A. Majorana, R. Pidatella (2001)
A Finite Difference Scheme Solving the Boltzmann Poisson System for Semiconductor DevicesJournal of Computational Physics, 174
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P. Markowich, C. Ringhofer, C. Schmeiser (1990)
Semiconductor equations
- Publisher
- Emerald Publishing
- Copyright
- Copyright © 2004 Emerald Group Publishing Limited. All rights reserved.
- ISSN
- 0332-1649
- DOI
- 10.1108/03321640410510578
- Publisher site
- See Article on Publisher Site
Abstract
Time‐depending solutions to the Boltzmann‐Poisson system in one spatial dimension and three‐dimensional velocity space are obtained by using a recent finite difference numerical scheme. The collision operator of the Boltzmann equation models the scattering processes between electrons and phonons assumed in thermal equilibrium. The numerical solutions for bulk silicon and for a one‐dimensional n + ‐n‐n + silicon diode are compared with the Monte Carlo simulation. Further comparisons with the experimental data are shown.
Journal
COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing
Published: Jun 1, 2004
Keywords: Electronic engineering; Semiconductor devices; Monte Carlo simulation; Silicon