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A mathematical analysis of the timedependent multidimensional Hydrodynamic model is performed to determine the wellposed boundary conditions for semiconductor device simulation. The number of independent boundary conditions that need to be specified at electrical contacts of a semiconductor device are derived. Using the classical energy method, a mathematical relation among the physical parameters is established to define the wellposed boundary conditions for the problem. Several possible sets of boundary conditions are given to illustrate the proper boundary conditions. Natural boundary conditions that can be specified are obtained from the boundary integrals of the weakform finite element formulations. An example is included to illustrate the importance of wellposedness of the boundary conditions for device simulation.
COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering – Emerald Publishing
Published: Feb 1, 1995
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